Dephasing in (Ga,Mn)As nanowires and rings

被引：36

作者：

Wagner, K. ^{[1
]}

Neumaier, D. ^{[1
]}

Reinwald, M. ^{[1
]}

Wegscheider, W. ^{[1
]}

Weiss, D. ^{[1
]}

机构：

[1] Univ Regensburg, Inst Expt & Angew Phys, D-8400 Regensburg, Germany

来源：

PHYSICAL REVIEW LETTERS | 2006年 / 97卷 / 05期

关键词：

D O I：

10.1103/PhysRevLett.97.056803

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

To understand quantum mechanical transport in a ferromagnetic semiconductor, the knowledge of basic material properties such as the phase coherence length and corresponding dephasing mechanism are indispensable ingredients. The lack of observable quantum phenomena has prevented experimental access to these quantities so far. Here we report the observations of universal conductance fluctuations in ferromagnetic (Ga,Mn)As. The analysis of the length and temperature dependence of the fluctuations reveals a T-1 dependence of the dephasing time.

引用

页数：4

共 29 条

[1] EFFECTS OF ELECTRON-ELECTRON COLLISIONS WITH SMALL ENERGY TRANSFERS ON QUANTUM LOCALIZATION [J].

ALTSHULER, BL ;

ARONOV, AG ;

KHMELNITSKY, DE .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (36) :7367-7386

[2] Anisotropic magnetoresistance in Ga1-xMnxAs -: art. no. 212407 [J].

Baxter, DV ;

Ruzmetov, D ;

Scherschligt, J ;

Sasaki, Y ;

Liu, X ;

Furdyna, JK ;

Mielke, CH .

PHYSICAL REVIEW B, 2002, 65 (21) :2124071-2124074

[3] ELECTRONIC INELASTIC LIFETIME NEAR A MOBILITY EDGE [J].

BELITZ, D ;

WYSOKINSKI, KI .

PHYSICAL REVIEW B, 1987, 36 (17) :9333-9336

[4] MAGNETOCONDUCTANCE OF METALLIC SI-B NEAR THE METAL-INSULATOR-TRANSITION [J].

DAI, P ;

ZHANG, YZ ;

SARACHIK, MP .

PHYSICAL REVIEW B, 1992, 46 (11) :6724-6731

[5] Free carrier-induced ferromagnetism in structures of diluted magnetic semiconductors [J].

Dietl, T ;

Haury, A ;

dAubigne, YM .

PHYSICAL REVIEW B, 1997, 55 (06) :R3347-R3350

[6] Ferromagnetic semiconductors [J].

Dietl, T .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2002, 17 (04) :377-392

[7] Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors [J].

Dietl, T ;

Ohno, H ;

Matsukura, F .

PHYSICAL REVIEW B, 2001, 63 (19)

[8] Mn interstitial diffusion in (Ga,Mn)As [J].

Edmonds, KW ;

Boguslawski, P ;

Wang, KY ;

Campion, RP ;

Novikov, SN ;

Farley, NRS ;

Gallagher, BL ;

Foxon, CT ;

Sawicki, M ;

Dietl, T ;

Nardelli, MB ;

Bernholc, J .

PHYSICAL REVIEW LETTERS, 2004, 92 (03) :4

[9] INFLUENCE OF S-D EXCHANGE INTERACTION ON UNIVERSAL CONDUCTANCE FLUCTUATIONS IN CD1-XMNXTE-IN [J].

JAROSZYNSKI, J ;

WROBEL, J ;

SAWICKI, M ;

KAMINSKA, E ;

SKOSKIEWICZ, T ;

KARCZEWSKI, G ;

WOJTOWICZ, T ;

PIOTROWSKA, A ;

KOSSUT, J ;

DIETL, T .

PHYSICAL REVIEW LETTERS, 1995, 75 (17) :3170-3173

[10] Prospects for high temperature ferromagnetism in (Ga,Mn)As semiconductors -: art. no. 165204 [J].

Jungwirth, T ;

Wang, KY ;

Masek, J ;

Edmonds, KW ;

König, J ;

Sinova, J ;

Polini, M ;

Goncharuk, NA ;

MacDonald, AH ;

Sawicki, M ;

Rushforth, AW ;

Campion, RP ;

Zhao, LX ;

Foxon, CT ;

Gallagher, BL .

PHYSICAL REVIEW B, 2005, 72 (16)

← 1 2 3 →