Mitigative Tin Whisker Growth Under Mechanically Applied Tensile Stress

被引：10

作者：

Chen, Yu-Jen ^{[1
]}

Chen, Chih-Ming ^{[1
]}

机构：

[1] Natl Chung Hsing Univ, Dept Chem Engn, Taichung 402, Taiwan

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2009年 / 38卷 / 03期

关键词：

Sn whisker; tensile stress; microstructure; HILLOCK FORMATION; SN; FILMS; ELECTRODEPOSITS; CU;

D O I：

10.1007/s11664-008-0619-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Sn whisker/hillock growth is a result of the release of compressive stress in a Sn thin film. Filamentary Sn whiskers were formed on an electrodeposited Sn thin film aged at room temperature, while Sn hillocks were formed as the aging temperature was raised to 80A degrees C and 150A degrees C. By mechanically applying a tensile stress on the Sn thin film, the growth of the Sn whisker/hillock was significantly mitigated. This mitigation growth suggests that part of the compressive stress in the Sn thin film was neutralized by the mechanically applied tensile stress.

引用

页码：415 / 419

页数：5

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