Structural and optical evolution of Ga2O3/glass thin films deposited by radio frequency magnetron sputtering

被引：45

作者：

Choi, K. H. ^{[1
]}

Kang, H. C. ^{[1
]}

机构：

[1] Chosun Univ, Dept Adv Mat Engn, Kwangju 501759, South Korea

来源：

MATERIALS LETTERS | 2014年 / 123卷

关键词：

Ga2O3; Nanowire; Optical bandgap; Refractive index; RF sputtering; GALLIUM OXIDE-FILMS; TRANSPARENT; CONDUCTION;

D O I：

10.1016/j.matlet.2014.03.038

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigated the structural and optical evolution of Ga2O3 thin films on glass substrates deposited using radio frequency magnetron sputtering. Initially, amorphous Ga2O3 thin film is grown, and then, surface humps and nanowire (NW) bundles are gradually formed as the film thickness increases. The surface humps are Ga-rich and provide nucleation sites for NWs through a self-catalytic vapor-liquid-solid mechanism with self-assembled Ga droplets. Both the surface humps and the NWs induce variation of the optical properties such as the optical bandgap and refractive index by absorbing light in the ultraviolet region. (c) 2014 Elsevier B.V. All rights reserved.

引用

页码：160 / 164

页数：5

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