Deuterium Trapping at the Pt/HfO2 Interface

被引：0

作者：

Driemeier, C. ^{[1
]}

Kanter, M. M. ^{[1
]}

Miotti, L. ^{[1
,2
]}

Soares, G. V. ^{[1
,2
]}

Baumvol, I. J. R. ^{[1
,2
]}

机构：

[1] Univ Fed Rio Grande do Sul, Inst Fis, BR-91501970 Porto Alegre, RS, Brazil

[2] Univ Caxias Sul, Ctr Ciencias Exatas & Tecnol, BR-95070560 Caxias Do Sul, Brazil

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2009年 / 12卷 / 04期

关键词：

annealing; deuterium; elemental semiconductors; etching; hafnium compounds; interface states; MIS structures; MOSFET; nanostructured materials; nuclear chemical analysis; passivation; platinum; silicon; surface chemistry; thin films; HYDROGEN; PASSIVATION; FILMS; KINETICS; CENTERS; H-2;

D O I：

10.1149/1.3070613

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

This work investigates the interaction of Pt/HfO2/Si nanometric film structures with deuterium gas (H-2(2)) at 500 degrees C, simulating the hydrogen passivation step commonly applied to metal-oxide-semiconductor devices. Selective chemical etching of Pt and HfO2 combined with H-2 detection by nuclear reaction analysis allowed quantification and depth profiling of H-2 incorporated into the structures. The presence of the top Pt layers does not measurably affect H-2 amounts incorporated underneath. However, similar to 10(14) H-2 cm(-2) are trapped at the Pt/HfO2 interfaces. This interfacial H-2 trapping implies that conventional H-2 passivation annealing can substantially influence the chemistry of metal-HfO2 interfaces.

引用

页码：G9 / G12

页数：4

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