Formation process for and strain effect in InAs quantum dots grown on GaAs substrates by using molecular beam epitaxy

被引：5

作者：

Kim, MD

Lee, DH

Kim, TW

Kim, SG

机构：

[1] Hanyang Univ, Div Elect & Comp Engn, Adv Semicond Res Ctr, Seoul 133791, South Korea

[2] Chungnam Natl Univ, Dept Phys, Taejon 305764, South Korea

[3] Joongbu Univ, Dept Mobile Commun, Gumsan Gun 132940, Chungnam, South Korea

来源：

SOLID STATE COMMUNICATIONS | 2004年 / 130卷 / 07期

关键词：

nanostructure; crystal growth; surface electron diffraction;

D O I：

10.1016/j.ssc.2004.02.043

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Reflection high-energy electron diffraction (RHEED) and atomic force microscopy (AFM) measurements were used to investigate the dependences of the formation process and the strain on the As/In ratio and the substrate temperature of InAs quantum dots (QDs) grown on GaAs Substrates by using molecular beam epitaxy. The thickness of the InAs wetting layer and the shape and the size of the InAs QDs were significantly affected by the As/In ratio and the substrate temperature. The strains in the InAs layer and the GaAs substrate were studied by using RHEED patterns. The magnitude in strain of the InAs QDs formed at a low Substrate temperature was larger than that in InAs QDs grown at high substrate temperature. The present results can help to improve the understanding of the formation process and the strain effect in InAs QDs. (C) 2004 Elsevier Ltd. All rights reserved.

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收藏

页码：473 / 476

页数：4

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