Formation process for and strain effect in InAs quantum dots grown on GaAs substrates by using molecular beam epitaxy

被引：5

作者：

Kim, MD

Lee, DH

Kim, TW

Kim, SG

机构：

[1] Hanyang Univ, Div Elect & Comp Engn, Adv Semicond Res Ctr, Seoul 133791, South Korea

[2] Chungnam Natl Univ, Dept Phys, Taejon 305764, South Korea

[3] Joongbu Univ, Dept Mobile Commun, Gumsan Gun 132940, Chungnam, South Korea

来源：

SOLID STATE COMMUNICATIONS | 2004年 / 130卷 / 07期

关键词：

nanostructure; crystal growth; surface electron diffraction;

D O I：

10.1016/j.ssc.2004.02.043

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Reflection high-energy electron diffraction (RHEED) and atomic force microscopy (AFM) measurements were used to investigate the dependences of the formation process and the strain on the As/In ratio and the substrate temperature of InAs quantum dots (QDs) grown on GaAs Substrates by using molecular beam epitaxy. The thickness of the InAs wetting layer and the shape and the size of the InAs QDs were significantly affected by the As/In ratio and the substrate temperature. The strains in the InAs layer and the GaAs substrate were studied by using RHEED patterns. The magnitude in strain of the InAs QDs formed at a low Substrate temperature was larger than that in InAs QDs grown at high substrate temperature. The present results can help to improve the understanding of the formation process and the strain effect in InAs QDs. (C) 2004 Elsevier Ltd. All rights reserved.

引用

页码：473 / 476

页数：4

共 50 条

[1] Capping process of InAs/GaAs quantum dots grown by molecular-beam epitaxy
Gong, Q
Offermans, P
Nöetzel, R
Koenraad, PM
Wolter, JH
SMIC-XIII: 2004 13th International Conference on Semiconducting & Insulating Materials, 2004, : 119 - 124
[2] InAs quantum dots grown by molecular beam epitaxy on GaAs (211)B polar substrates
Zervos, M.
Xenogianni, C.
Deligeorgis, G.
Androulidaki, M.
Savvidis, P. G.
Hatzopoulos, Z.
Pelekanos, N. T.
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 11, 2006, 3 (11): : 3988 - +
[3] Selective formation of self-organized InAs quantum dots grown on patterned GaAs substrates by molecular beam epitaxy
Ueta, A
Akahane, K
Gozu, S
Yamamoto, N
Ohtani, N
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (4B): : 3556 - 3559
[4] InAsSb quantum dots grown on GaAs substrates by molecular beam epitaxy
Kudo, M
Nakaoka, T
Iwamoto, S
Arakawa, Y
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (1-7): : L45 - L47
[5] InAsSb quantum dots grown on GaAs substrates by molecular beam epitaxy
Kudo, Makoto
Nakaoka, Toshihiro
Iwamoto, Satoshi
Arakawa, Yasuhiko
Jpn J Appl Phys Part 2 Letter, 1-7 (L45-L47):
[6] Growth of InAs quantum dots on vicinal GaAs substrates by molecular beam epitaxy
Weir, Nicholas
Yao, Ruizhe
Lee, Chi-Sen
Guo, Wei
JOURNAL OF CRYSTAL GROWTH, 2016, 451 : 79 - 82
[7] Effect of antimony irradiation on InAs/Sb:GaAs quantum dots grown by molecular beam epitaxy
Yang, Xiaoguang
Yang, Tao
Wang, Kefan
Ji, Haiming
Ni, Haiqiao
Niu, Zhichuan
Wang, Zhanguo
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2011, 26 (07)
[8] Effect of InGaAs as a Strain Reducing Layer on Molecular Beam Epitaxy grown InAs Quantum Dots
Saha, Jhuma
Panda, Debiprasad
Das, Debabrata
Chakrabarti, Subhananda
2018 3RD INTERNATIONAL CONFERENCE ON MICROWAVE AND PHOTONICS (ICMAP), 2018,
[9] Self-organized InAs/GaAs quantum dots grown on (100) misoriented substrates by molecular beam epitaxy
Chen, MC
Liao, MCH
Lin, HH
JOURNAL OF CRYSTAL GROWTH, 1998, 188 (1-4) : 383 - 386
[10] Misfitstrain and growth characteristics of InAs/GaAs quantum dots grown by molecular beam epitaxy
Kim, Hyubg Seok
Suh, Ju Hyung
Park, Chan Gyung
Lee, Sang June
Noh, Sam Kyu
IEEE NMDC 2006: IEEE NANOTECHNOLOGY MATERIALS AND DEVICES CONFERENCE 2006, PROCEEDINGS, 2006, : 198 - +

← 1 2 3 4 5 →