Rotating Anisotropic Crystalline Silicon Nanoclusters in Graphene

被引：15

作者：

Chen, Qu ^{[1
]}

Koh, Al Leen ^{[2
]}

Robertson, Alex W. ^{[1
]}

He, Kuang ^{[1
]}

Lee, Sungwoo ^{[3
]}

Yoon, Euijoon ^{[3
]}

Lee, Gun-Do ^{[3
]}

Sinclair, Robert ^{[4
]}

Warner, Jamie H. ^{[1
]}

机构：

[1] Univ Oxford, Dept Mat, Oxford OX1 3PH, England

[2] Stanford Univ, Stanford Nano Shared Facil, Stanford, CA 94305 USA

[3] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151742, South Korea

[4] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA

来源：

ACS NANO | 2015年 / 9卷 / 10期

基金：

美国国家科学基金会; 英国工程与自然科学研究理事会; 新加坡国家研究基金会;

关键词：

graphene; TEM; dopants; Si atoms; DYNAMICS; DEFECT;

D O I：

10.1021/acsnano.5b03476

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The atomic structure and dynamics of silicon nanoclusters covalently bonded to graphene are studied using aberration-corrected transmission electron microscopy. We show that as the cluster size increases to 4-10 atoms, ordered crystalline cubic phases start to emerge. Anisotropic crystals are formed due to higher stability of the Si-C bond under electron beam irradiation compared to the Si Si bond. Dynamics of the anisotropic crystalline Si nanoclusters reveal that they can rotate perpendicular to the graphene plane, with oscillations between the two geometric configurations driven by local volume constraints. These results provide important insights into the crystalline phases of clusters of inorganic dopants in graphene at the intermediate size range between isolated single atoms and larger bulk 2D forms.

引用

页码：9497 / 9506

页数：10

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