Partial recovery of the magnetoelectrical properties of AlGaN/GaN-based micro-Hall sensors irradiated with protons

被引：7

作者：

Abderrahmane, A. ^{[1
]}

Tashiro, T. ^{[1
]}

Takahashi, H. ^{[1
]}

Ko, P. J. ^{[2
]}

Okada, H. ^{[1
,2
]}

Sato, S. ^{[3
]}

Ohshima, T. ^{[3
]}

Sandhu, A. ^{[1
,2
]}

机构：

[1] Toyohashi Univ Technol, Dept Elect & Elect Informat Engn, Toyohashi, Aichi 4418580, Japan

[2] Toyohashi Univ Technol, Elect Inspired Interdisciplinary Res Inst EIIRIS, Toyohashi, Aichi 4418580, Japan

[3] Japan Atom Energy Agcy JAEA, Quantum Beam Sci Directorate, Takasaki, Gunma 3701292, Japan

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 02期

关键词：

ELECTRON-MOBILITY TRANSISTORS; MAGNETIC-FIELD SENSORS; RAMAN SCATTERING; N-GAN; TEMPERATURE; DEFECTS;

D O I：

10.1063/1.4861902

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of annealing on the magnetoelectrical properties of proton-irradiated micro-Hall sensors at an energy of 380 keV and very high proton fluences was studied. Recovery of the electron mobility and a decrease in the sheet resistance of the annealed micro-Hall sensors, as well as an enhancement in their magnetic sensitivity were reported. Trap removal and an improvement in the crystal quality by removing defects were confirmed through current-voltage measurements and Raman spectroscopy, respectively. (C) 2014 AIP Publishing LLC.

引用

页数：4

共 18 条

[1] Effect of Proton Irradiation on 2DEG in AlGaN/GaN Heterostructures [J].

Abderrahmane, A. ;

Koide, S. ;

Tahara, T. ;

Sato, S. ;

Ohshima, T. ;

Okada, H. ;

Sandhu, A. .

IRAGO CONFERENCE 2012, 2013, 433

[2] Robust Hall Effect Magnetic Field Sensors for Operation at High Temperatures and in Harsh Radiation Environments [J].

Abderrahmane, Abdelkader ;

Koide, Shota ;

Sato, Shin-Ichiro ;

Ohshima, Takeshi ;

Sandhu, Adarsh ;

Okada, Hiroshi .

IEEE TRANSACTIONS ON MAGNETICS, 2012, 48 (11) :4421-4423

[3] Electron mobility, Hall scattering factor, and sheet conductivity in AlGaN/AlN/GaN heterostructures [J].

Asgari, A. ;

Babanejad, S. ;

Faraone, L. .

JOURNAL OF APPLIED PHYSICS, 2011, 110 (11)

[4] Prospects of Using In-Containing Semiconductor Materials in Magnetic Field Sensors for Thermonuclear Reactor Magnetic Diagnostics [J].

Bolshakova, Inessa ;

Vasilevskii, Ivan ;

Viererbl, Ladislav ;

Duran, Ivan ;

Kovalyova, Nelli ;

Kovarik, Karel ;

Kost, Yaroslav ;

Makido, Olena ;

Sentkerestiova, Jana ;

Shtabalyuk, Agata ;

Shurygin, Fedir .

IEEE TRANSACTIONS ON MAGNETICS, 2013, 49 (01) :50-53

[5] Electrical isolation of GaN by MeV ion irradiation [J].

Boudinov, H ;

Kucheyev, SO ;

Williams, JS ;

Jagadish, C ;

Li, G .

APPLIED PHYSICS LETTERS, 2001, 78 (07) :943-945

[6]

de Jong P. C., 2002, P IEEE SENS, V2, P1440

[7] Radiation induced defects in MOVPE grown n-GaN [J].

Goodman, SA ;

Auret, FD ;

Koschnick, FK ;

Spaeth, JM ;

Beaumont, B ;

Gibart, P .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 71 :100-103

[8] Electrical defects introduced during high-temperature irradiation of GaN and AlGaN [J].

Hayes, M ;

Auret, FD ;

Wu, L ;

Meyer, WE ;

Nel, JM ;

Legodi, MJ .

PHYSICA B-CONDENSED MATTER, 2003, 340 :421-425

[9] The energy dependence of proton-induced degradation in AlGaN/GaN high electron mobility transistors [J].

Hu, XW ;

Choi, BK ;

Barnaby, HJ ;

Fleetwood, DM ;

Schrimpf, RD ;

Lee, SC ;

Shojah-Ardalan, S ;

Wilkins, R ;

Mishra, UK ;

Dettmer, RW .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2004, 51 (02) :293-297

[10] High Temperature Hall sensors using AlGaN/GaN HEMT Structures [J].

Koide, S. ;

Takahashi, H. ;

Abderrahmane, A. ;

Shibasaki, I. ;

Sandhu, A. .

ASIA-PACIFIC INTERDISCIPLINARY RESEARCH CONFERENCE 2011 (AP-IRC 2011), 2012, 352

← 1 2 →