The electrical and material properties of HfOxNy dielectric on germanium substrate

被引：9

作者：

Zhang, QC ^{[1
]}

Nan, W ^{[1
]}

Zhu, CX ^{[1
]}

机构：

[1] Natl Univ Singapore, Dept Elect & Comp Engn, Silicon Nano Device Lab, Singapore 119260, Singapore

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2004年 / 43卷 / 9A-B期

关键词：

germanium; hafnium oxynitride; MOS capacitor; deposition; annealing;

D O I：

10.1143/JJAP.43.L1208

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Hafnium oxynitride (HfOxNy) film was investigated as a possible gate dielectric of germanium metal-oxide-semiconductor (MOS) device. The thin HfOxNy dielectric was prepared using reactive sputtering, followed by post deposition annealing (PDA). The dependence of the equivalent oxide thickness (EOT) on PDA condition was investigated. A small EOT of 1.97 Angstrom with a low leakage current of 3.1 X 10(-5) A/cm(2) (V-g = 1 V) was achieved with PDA at 600degreesC. In addition, the material properties of HfOxNy on germanium were analyzed by X-ray photoelectron spectroscopy. The nitrogen is found to pile up at the dielectric/substrate interface and to form Ge-N bonds, which contribute to the interfacial layer (IL) suppression.

引用

页码：L1208 / L1210

页数：3

共 13 条

[1] Preparation of high-quality Ge substrate for MBE [J].

Akane, T ;

Tanaka, J ;

Okumura, H ;

Matsumoto, S .

APPLIED SURFACE SCIENCE, 1997, 108 (02) :303-305

[2]

BAI WP, 2003, VLSI S, P121

[3]

CHANG SK, 2002, VLSI, P146

[4]

Chui CO, 2002, INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST, P437, DOI 10.1109/IEDM.2002.1175872

[5] An X-ray photoelectron spectroscopy study of the HF etching of native oxides on Ge(111) and Ge(100) surfaces [J].

Deegan, T ;

Hughes, G .

APPLIED SURFACE SCIENCE, 1998, 123 :66-70

[6] Highly efficient polymer light-emitting devices using a phosphorescent sensitizer (vol 81, pg 1509, 2002) [J].

He, G ;

Chang, SC ;

Chen, FC ;

Li, Y ;

Yang, Y .

APPLIED PHYSICS LETTERS, 2002, 81 (22) :4293-4293

[7] COMPOSITIONAL STUDY OF ULTRATHIN RAPIDLY REOXIDIZED NITRIDED OXIDES [J].

HORI, T ;

IWASAKI, H ;

OHMURA, T ;

SAMIZO, A ;

SATO, M ;

YOSHIOKA, Y .

JOURNAL OF APPLIED PHYSICS, 1989, 65 (02) :629-635

[8]

HUANG CH, 2003, VLSI S, P119

[9] ION-IMPLANTATION OF BORON IN GERMANIUM [J].

JONES, KS ;

HALLER, EE .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (07) :2469-2477

[10]

LOW T, 2003, VLSI S, P117

← 1 2 →