Cesium near-surface concentration in low energy, negative mode dynamic SIMS

被引：13

作者：

Berghmans, B. ^{[1
,2
]}

Van Daele, B. ^{[2
]}

Geenen, L. ^{[2
]}

Conard, T. ^{[2
]}

Franquet, A. ^{[2
]}

Vandervorst, W. ^{[1
,2
]}

机构：

[1] Katholieke Univ Leuven, Dept Phys, B-3001 Louvain, Belgium

[2] AMPS MCA, IMEC, B-3001 Louvain, Belgium

来源：

APPLIED SURFACE SCIENCE | 2008年 / 255卷 / 04期

关键词：

Cesium; Silicon; Ultra low energy; Sputtering; SIMS;

D O I：

10.1016/j.apsusc.2008.05.020

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Reducing the energy of the primary ions will improve the depth resolution in SIMS depth profiling. At ultra low energies (<150 eV) the sputtering yield is drastically reduced. In this report we will focus on Cs(+) ions, which are commonly used for their enhancement of negative secondary ion formation, and discuss the impact of these extreme conditions on the steady state surface concentration of cesium. In contrary to what is found from sputtering-based retention models, the steady state surface concentration of (retained) cesium on silicon reaches a maximum value in the order of 15 at%. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：1316 / 1319

页数：4

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