Band lineup at the interface between boron-doped P-type hydrogenated amorphous silicon and crystalline silicon studied by internal photoemission

被引：7

作者：

Sakata, I ^{[1
]}

Yamanaka, M ^{[1
]}

Shimokawa, R ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2004年 / 43卷 / 7B期

关键词：

hydrogenated amorphous silicon; heterojunction; band lineup; internal photoemission; back-surface recombination velocity;

D O I：

10.1143/JJAP.43.L954

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have measured for the first time the band lineup at the interface between boron-doped p-type hydrogenated amorphous silicon (a-Si:H) and crystalline silicon (c-Si) by internal photoemission and have found that the band discontinuity mainly exists on conduction-band (CB) side in this type of heterojuctions. This band lineup is related with the low back-surface recombination velocity observed in n(+)(c-Si) - p(c-Si) - p(+)(a-Si:H) solar cells.

引用

页码：L954 / L956

页数：3

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