Simultaneous growth of Ni5Ge3 and NiGe by reaction of Ni film with Ge

被引：47
作者：
Nemouchi, F.
Mangelinck, D.
Bergman, C.
Clugnet, G.
Gas, P.
Labar, J. L.
机构：
[1] Univ Paul Cezanne, CNRS, L2MP, F-13397 Marseille 20, France
[2] Res Inst Tech Phys & Mat Sci MFA, H-1121 Budapest, Hungary
来源：
APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 13期
基金：
匈牙利科学研究基金会;
关键词：
D O I：
10.1063/1.2358189
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The reaction between nanometric Ni films and Ge is analyzed using isothermal x-ray diffraction measurements and transmission electron microscopy. It is found that NiGe is formed during deposition at room temperature. The metal rich phase that grows during heat treatment has been clearly identified to be Ni5Ge3. The simultaneous growths of Ni5Ge3 and NiGe have been observed on amorphous and polycrystalline germanium. This is in contrast with the usual sequential growth reported in thin films. (c) 2006 American Institute of Physics.
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页数：3
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