Selective dependence of the electron-phonon interaction on the nature of the optical transition in AlGaAs quantum wells

被引：4

作者：

Sergio, Cassio Sanguini ^{[1
]}

Duarte, Celso de Araujo ^{[2
]}

Arevalo Anzola, Carlos Eduardo ^{[3
]}

de Aquino, Gilmar Macedo ^{[3
]}

Gusev, Guennady Michailovich ^{[4
]}

机构：

[1] Univ Fed Roraima, Dept Fis, Av Cap Ene Garcez 2413, BR-69310000 Boa Vista RR, Roraima RR, Brazil

[2] Univ Fed Parana, Dept Fis, CP 19044, BR-81531990 Curitiba, Parana, Brazil

[3] Univ Fed Roraima, Programa Pos Grad Fis, Roraima, RR, Brazil

[4] Univ Sao Paulo, Inst Fis, Dept Fis Mat & Mecan, BR-05508090 Sao Paulo, SP, Brazil

来源：

JOURNAL OF LUMINESCENCE | 2018年 / 202卷

关键词：

Electron-phonon interaction; AlGaAs; Quantum well; Photoluminescence; NEGATIVELY CHARGED EXCITONS; TEMPERATURE-DEPENDENCE; ALXGA1-XAS; GAAS;

D O I：

10.1016/j.jlumin.2018.05.072

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In the present work, it is carried out a study of the optical emission of AlxGa1-xAs/GaAs quantum wells by photoluminescence (PL). A detailed analysis of the thermal redshift of the (PL) peaks showed that strength of the electron-phonon interaction is influenced by the degree of binding of the electron in the conduction band (free or localized excitonic state, bulk or quantum size confined state).

引用

页码：322 / 326

页数：5

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