Influence of Traps and Carriers on Reliability in HfSiON/SiO2 Stacks

被引：8
|
作者：
Hirano, Izumi [1 ]
Yamaguchi, Takeshi [1 ]
Nakasaki, Yasushi [1 ]
Sekine, Katsuyuki [2 ]
Mitani, Yuichiro [1 ]
机构：
[1] Toshiba Co Ltd, Adv LSI Technol Lab, Corp Res & Dev Ctr, Yokohama, Kanagawa 2358522, Japan
[2] Toshiba Co Ltd, Proc & Mfg Engn Ctr, Semicond Co, Yokohama, Kanagawa 2358522, Japan
来源：
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | 2009年 / 9卷 / 02期
关键词：
Dielectric breakdown; hafnium compounds; MOSFETs; reliability; ORIGIN;
D O I：
10.1109/TDMR.2009.2013939
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The influence of traps and current on the degradation in HfSiON has been studied. Different characteristics of activation energy for TDDB between thick and thin HfSiON, where the Poole Frenkel (PF) and tunnel currents mainly flow, respectively, were observed in the same temperature range. It was indicated that the current could promote the breakdown in HfSiON. Furthermore, we investigated the correlation between pre-existing traps and trap generation in HfSiON/SiO2 stacks with fluorine incorporation. It was found that the nature of generated traps correspond to that of pre-existing traps. From these results, it was considered that the interaction between traps and carriers causes the degradation in HfSiON.
引用
收藏
页码：163 / 170
页数：8
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