The Role of Interface Dynamics on the Reliability Performance of BEOL Integrated Ferroelectric HfO2 Capacitors

被引：9

作者：

Alcala, R. ^{[1
]}

Lomenzo, P. D. ^{[1
]}

Mittmann, T. ^{[1
]}

Xu, B. ^{[1
]}

Guido, R. ^{[1
]}

Lancaster, S. ^{[1
]}

Vishnumurthy, P. ^{[1
]}

Grenouillet, L. ^{[2
]}

Martin, S. ^{[2
]}

Coignus, J. ^{[2
]}

Mikolajick, T. ^{[1
]}

Schroeder, U. ^{[1
]}

机构：

[1] TU Dresden gGmbH, NaMLab, Noethnitzer Str 64A, D-01187 Dresden, Germany

[2] Univ Grenoble Alpes, CEA, LETI, F-38000 Grenoble, France

来源：

2022 INTERNATIONAL ELECTRON DEVICES MEETING, IEDM | 2022年

关键词：

D O I：

10.1109/IEDM45625.2022.10019554

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A complete picture of the dynamics of the ferroelectric oxide/metal interface is presented, which unifies the main reliability issues, field cycling endurance, and retention for HfO2(sic)based films in ferroelectric random-access memory. Together with a novel retention interpretation, the ferroelectric interface is established as the key component for pioneering HfO2-based ferroelectrics for commercial memories.

引用

页数：4

共 9 条

[1]

Alcala R., 2022, IEEE EDTM

[2] Origin of the retention loss in ferroelectric Hf0.5Zr0.5O2-based memory devices [J].

Chouprik, Anastasia ;

Kondratyuk, Ekaterina ;

Mikheev, Vitalii ;

Matveyev, Yury ;

Spiridonov, Maxim ;

Chernikova, Anna ;

Kozodaev, Maxim G. ;

Markeev, Andrey M. ;

Zenkevich, Andrei ;

Negrov, Dmitrii .

ACTA MATERIALIA, 2021, 204

[3]

Fengler F.P.G., 2018, ADV ELEC MAT, V4, P3

[4]

Francois T., 2021, IEEE IEDM

[5]

Hamouda W., 2020, J APPL PHYS, P127

[6]

Lancaster S, 2022, FRONTIERS

[7]

Lomenzo P.D., 2020, ACS APPL ELECTRON MA, V2, P6

[8] Reliability Characteristics of Ferroelectric Si: HfO2 Thin Films for Memory Applications [J].

Mueller, Stefan ;

Mueller, Johannes ;

Schroeder, Uwe ;

Mikolajick, Thomas .

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2013, 13 (01) :93-97

[9]

Mulaosmanovic H., 2021, IEEE IRPS

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