Calcium as a nonradiative recombination center in InGaN

被引：25

作者：

Shen, Jimmy-Xuan ^{[1
]}

Wickramaratne, Darshana ^{[2
]}

Dreyer, Cyrus E. ^{[3
]}

Alkauskas, Audrius ^{[4
]}

Young, Erin ^{[2
]}

Speck, James S. ^{[2
]}

Van de Walle, Chris G. ^{[2
]}

机构：

[1] Univ Calif Santa Barbara, Dept Phys, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[3] Rutgers State Univ, Dept Phys & Astron, Piscataway, NJ 08845 USA

[4] Ctr Phys Sci & Technol, LT-10257 Vilnius, Lithuania

来源：

APPLIED PHYSICS EXPRESS | 2017年 / 10卷 / 02期

基金：

美国国家科学基金会;

关键词：

TOTAL-ENERGY CALCULATIONS; IMPURITIES; EFFICIENCY;

D O I：

10.7567/APEX.10.021001

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Calcium can be unintentionally incorporated during the growth of semiconductor devices. Using hybrid functional first-principles calculations, we assess the role of Ca impurities in GaN. Ca substituted on the cation site acts as a deep acceptor with a level similar to 1 eV above the GaN valence-band maximum. We find that for Ca concentrations of 10(17)cm(-3), the Shockley-Read-Hall recombination coefficient, A, of InGaN exceeds 10(6) s(-1) for band gaps less than 2.5 eV. A values of this magnitude can lead to significant reductions in the efficiency of light-emitting diodes. (C) 2017 The Japan Society of Applied Physics

引用

页数：3

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