Optimization of InAs/GaSb core-shell nanowire structure for improved TFET performance

被引：12

作者：

Singh, Sankalp Kumar ^{[1
]}

Kakkerla, Ramesh Kumar ^{[1
]}

Joseph, H. Bijo ^{[2
]}

Gupta, Ankur ^{[3
]}

Anandan, Deepak ^{[1
]}

Nagarajan, Venkatesan ^{[1
]}

Yu, Hung Wei ^{[1
]}

Thiruvadigal, D. John ^{[2
]}

Chang, Edward Yi ^{[1
,4
]}

机构：

[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 30010, Taiwan

[2] SRM Inst Sci & Technol, Dept Phys & Nanotechnol, Chennai 603203, Tamil Nadu, India

[3] IIT Delhi, Ctr Appl Res Elect, New Delhi 110016, India

[4] Natl Chiao Tung Univ, Int Coll Semicond Technol, Hsinchu 30010, Taiwan

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2019年 / 101卷

关键词：

Core-shell; Nanowire; Subthreshold swing (SS); TFET; FIELD-EFFECT TRANSISTORS; GROWTH;

D O I：

10.1016/j.mssp.2019.06.004

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The performance of InAs/GaSb core-shell nanowire TFET is systematically investigated for the effects of intrinsic device parameters such as channel doping, shell thickness, spacer length and source offset. Device ON-current (I-ON) was chosen as the key figure of merit. It is found that I-ON improves due to improved electrostatic control achieved by the TFET with optimum shell diameter. The maximum I-ON obtained for a shell thickness of 2 nm was 33.65 mu A/mu m and a Subthreshold Swing (SS) of 12.9 mV/decade with an I-ON/I-OFF ratio of 1.49 x 10(8) for our device. Device I-ON can be further improved by adding an optimum spacer at the source-channel junction. It was also found that device ON-current is almost constant and does not get much affected by having a larger shell offset.

引用

页码：247 / 252

页数：6

共 34 条

[1]

Ahn D, 2016, INT SOC DESIGN CONF, P1, DOI 10.1109/ISOCC.2016.7799763

[2] Tunnel field effect transistor with increased ON current, low-k spacer and high-k dielectric [J].

Anghel, Costin ;

Chilagani, Prathyusha ;

Amara, Amara ;

Vladimirescu, Andrei .

APPLIED PHYSICS LETTERS, 2010, 96 (12)

[3]

[Anonymous], 2015, SENT TCAD MAN REL K

[4] Realization of nanoscaled tubular conductors by means of GaAs/InAs core/shell nanowires [J].

Bloemers, C. ;

Rieger, T. ;

Zellekens, P. ;

Haas, F. ;

Lepsa, M. I. ;

Hardtdegen, H. ;

Guel, Oe ;

Demarina, N. ;

Gruetzmacher, D. ;

Lueth, H. ;

Schaepers, Th .

NANOTECHNOLOGY, 2013, 24 (03)

[5] Double-gate tunnel FET with high-κ gate dielectric [J].

Boucart, Kathy ;

Mihai Ionescu, Adrian .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (07) :1725-1733

[6] Subthreshold-swing physics of tunnel field-effect transistors [J].

Cao, Wei ;

Sarkar, Deblina ;

Khatami, Yasin ;

Kang, Jiahao ;

Banerjee, Kaustav .

AIP ADVANCES, 2014, 4 (06)

[7] InAs Thin-Channel High-Electron-Mobility Transistors with Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications [J].

Chang, Edward-Yi ;

Kuo, Chien-I ;

Hsu, Heng-Tung ;

Chiang, Che-Yang ;

Miyamoto, Yasuyuki .

APPLIED PHYSICS EXPRESS, 2013, 6 (03)

[8] Multiple-gate SOI MOSFETs [J].

Colinge, JP .

SOLID-STATE ELECTRONICS, 2004, 48 (06) :897-905

[9] Electrical properties of GaSb/InAsSb core/shell nanowires [J].

Ganjipour, Bahram ;

Sepehri, Sobhan ;

Dey, Anil W. ;

Tizno, Ofogh ;

Borg, B. Mattias ;

Dick, Kimberly A. ;

Samuelson, Lars ;

Wernersson, Lars-Erik ;

Thelander, Claes .

NANOTECHNOLOGY, 2014, 25 (42)

[10] Carrier control and transport modulation in GaSb/InAsSb core/shell nanowires [J].

Ganjipour, Bahram ;

Ek, Martin ;

Borg, B. Mattias ;

Dick, Kimberly A. ;

Pistol, Mats-Erik ;

Wernersson, Lars-Erik ;

Thelander, Claes .

APPLIED PHYSICS LETTERS, 2012, 101 (10)

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