Robust weak anti-localisation effect in strongly textured nanocrystalline Bi2Se3 samples

被引:3
作者
Pereira, V. M. M. [1 ,2 ]
Henriques, M. S. C. [1 ]
Paixao, J. A. [1 ]
机构
[1] Univ Coimbra, Dept Phys, CFisUC, Rua Larga, P-3004516 Coimbra, Portugal
[2] Max Planck Inst Chem Phys Solids, Nothnitzer Str 40, D-01187 Dresden, Germany
关键词
Topological insulator; Weak anti-localisation; Magnetoresistance; Bi2Se3; SURFACE; BI2TE3;
D O I
10.1016/j.physb.2017.10.100
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Topological insulators are a quantum state of matter that has recently created a great interest among the scientific community, with Bi2Se3 being one of the most extensively studied materials. Here, we demonstrate that polycrystalline nanostructured samples of Bi2Se3 preserve the existence of topological surface states, where electrons cannot be localised. The nanosheet crystals were synthesised by a microwave-assisted method and their structure, composition and morphology thoroughly characterised. The transport properties of a textured polycrystalline sample with strong preferred orientation along the c-axis were measured, showing the presence of the weak anti-localisation effect and Shubnikov-de Haas oscillations. These features are robust against the presence of non-magnetic impurities and structural defects.
引用
收藏
页码:51 / 55
页数:5
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