Neutron irradiation effects in p-GaN

被引：30

作者：

Polyakov, A. Y.

Smirnov, N. B.

Govorkov, A. V.

Markov, A. V.

Kolin, N. G.

Merkurisov, D. I.

Boiko, V. M.

Shcherbatchev, K. D.

Bublik, V. T.

Voronova, M. I.

Pearton, S. J.

Dabiran, A.

Osinsky, A. V.

机构：

[1] Inst Rare Met B, Moscow 119017, Russia

[2] Fed State Unitary Enterprise, Karpov Inst Phys Chem, Obninsk Branch, Obninsk 249033, Russia

[3] Moscow State Inst Steel & Alloys, Semicond Mat Sci Dept, Moscow 119991, Russia

[4] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[5] SVTAssociates, Eden Prairie, MN 55344 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2006年 / 24卷 / 05期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1116/1.2338045

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electrical properties, admittance, and microcathodoluminescence spectra are compared for p-GaN samples grown by hydride vapor phase epitaxy (HVPE) and by molecular beam epitaxy (MBE). The former are characterized by a high 300 K hole concentration and a weak temperature dependence of conductivity. The latter samples show strongly temperature-activated conductivity due to ionization of Mg acceptors. The main effects of neutron irradiation were similar for the p-HVPE and the p-MBE materials: a compensation of p-type conductivity starting with neutron fluences exceeding 2 X 10(16) cm(-2) and conversion to high resistivity n type with the Fermi level pinned near E-c-(0.8-0.9) eV after irradiation with high doses of 10(18) cm(-2). For the heavily neutron irradiated p-HVPE samples, a strong increase was observed in the c-lattice parameter which indicates an important role for interstitial-type defects. (c) 2006 American Vacuum Society.

引用

页码：2256 / 2261

页数：6

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