Large-grain polysilicon crystallization enhancement using pulsed RTA

被引：4

作者：

Cheng, CF ^{[1
]}

Leung, TC ^{[1
]}

Poon, MC ^{[1
]}

Chan, M ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, Dept Elect & Elect Engn, Kowloon, Hong Kong, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2004年 / 25卷 / 08期

关键词：

crystallization; pulsed rapid thermal annealing (PRTA); polysilicon; thin-film transistor (TFT);

D O I：

10.1109/LED.2004.831588

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Enhanced metal-induced lateral crystallization (MILC) using a pulsed rapid thermal annealing (PRTA) technique to form a large-grain polysilicon layer has been investigated. By applying high temperature for a short period of time, MILC is enhanced while the background solid phase crystallization is suppressed. Experimental results show that the PRTA method is capable of increasing the rate of directional crystallization and improving the crystal quality of the recrystallized polysilicon layer. The overall annealing time and total thermal budget to achieve similar grain size as in constant temperature annealing is also reduced.

引用

页码：553 / 555

页数：3

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