Modifying the Improved Light-Output Intensity of AlGaInP-Based LEDs by Nanoporous Alimina

被引：0
作者：
Wang, Chien-Chun [1 ]
Liu, Chien-Chih [2 ]
Chong, Kwok-Keung [3 ]
Hung, Chen-, I [4 ]
Wang, Yeong-Her [1 ]
Houng, Mau-Phon [5 ]
机构：
[1] Natl Cheng Kung Univ, Inst Electroopt Sci & Engn, Tainan 701, Taiwan
[2] Nan Jeon Inst Technol, Dept Elect Engn, Tainan 737, Taiwan
[3] Natl Kaohsiung Marine Univ, Dept Microelect Engn, Kaohsiung 811, Taiwan
[4] Natl Cheng Kung Univ, Dept Mech Engn, Tainan 701, Taiwan
[5] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 701, Taiwan
来源：
2008 IEEE 20TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) | 2008年
关键词：
light-emitting diodes; nanoporous alumina;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This investigation describes the development of AlGaInP light-emitting diodes (LEDs) with a nanometer diameter of porous anodic alumina (PAA) films which are formed by anodization technique to improve and modify the light extraction efficiency. The pore-widening time was changed for surface modulation to obtain the optimum tight extraction efficiency. The diameter of nano-pores varies from 30nm to 60 nm and the interpore spacing is about 75 nm. The light output intensity of the PAA LEDs with 40 minutes pore-widening is 1.39 times that of conventional LEDs. PAA films can effectively reduce critical angle loss, Fresnel loss and be used as scattering center to improve the light extraction.
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页码：25 / +
页数：2
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