Band structure of Ge1-xSnx alloy: a full-zone 30-band k.p model

被引：41

作者：

Song, Zhigang ^{[1
]}

Fan, Weijun ^{[1
]}

Tan, Chuan Seng ^{[1
]}

Wang, Qijie ^{[1
]}

Nam, Donguk ^{[1
]}

Zhang, Dao Hua ^{[1
]}

Sun, Greg ^{[2
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, 50 Nanyang Ave, Singapore 639798, Singapore

[2] Univ Massachusetts, Dept Engn, Boston, MA 02125 USA

来源：

NEW JOURNAL OF PHYSICS | 2019年 / 21卷 / 07期

关键词：

k.p method; GeSn; band structure; SILICON; GERMANIUM;

D O I：

10.1088/1367-2630/ab306f

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A full-zone 30-band k.p model is developed as an efficient and reliable tool to compute electronic band structure in Ge1-xSnx alloy. The model was first used to reproduce the electronic band structures in Ge and alpha-Sn obtained with empirical tight binding and ab initio methods. Input parameters for the 30-band k.p model are carefully calibrated against prior empirical predications and experimental data. Important material properties such as effective mass for electrons and holes, Luttinger parameters, and density of states are obtained for Ge1-xSnx alloy with the composition range 0 < x < 0.3. The 30-band k.p model that requires far less computing resources is a necessary capability for optimization of sophisticated devices made from Ge1-xSnx alloy with a large parameter space to explore.

引用

页数：11

共 34 条

[1] An optically pumped 2.5 μm GeSn laser on Si operating at 110 K [J].

Al-Kabi, Sattar ;

Ghetmiri, Seyed Amir ;

Margetis, Joe ;

Pham, Thach ;

Zhou, Yiyin ;

Dou, Wei ;

Collier, Bria ;

Quinde, Randy ;

Du, Wei ;

Mosleh, Aboozar ;

Liu, Jifeng ;

Sun, Greg ;

Soref, Richard A. ;

Tolle, John ;

Li, Baohua ;

Mortazavi, Mansour ;

Naseem, Hameed A. ;

Yu, Shui-Qing .

APPLIED PHYSICS LETTERS, 2016, 109 (17)

[2] Band anticrossing in highly mismatched SnxGe1-x semiconducting alloys [J].

Alberi, K. ;

Blacksberg, J. ;

Bell, L. D. ;

Nikzad, S. ;

Yu, K. M. ;

Dubon, O. D. ;

Walukiewicz, W. .

PHYSICAL REVIEW B, 2008, 77 (07)

[3] Indirect-to-direct band gap transition in relaxed and strained Ge1-x-ySixSny ternary alloys [J].

Attiaoui, Anis ;

Moutanabbir, Oussama .

JOURNAL OF APPLIED PHYSICS, 2014, 116 (06)

[4] A simple effective potential for exchange [J].

Becke, Axel D. ;

Johnson, Erin R. .

JOURNAL OF CHEMICAL PHYSICS, 2006, 124 (22)

[5] 30-band k•p method for quantum semiconductor heterostructures [J].

Boyer-Richard, S. ;

Raouafi, F. ;

Bondi, A. ;

Pedesseau, L. ;

Katan, C. ;

Jancu, J. -M. ;

Even, J. .

APPLIED PHYSICS LETTERS, 2011, 98 (25)

[6] ENERGY-BAND STRUCTURE OF GERMANIUM AND SILICON - K.P METHOD [J].

CARDONA, M ;

POLLAK, FH .

PHYSICAL REVIEW, 1966, 142 (02) :530-&

[7]

Chadov S, 2010, NAT MATER, V9, P541, DOI [10.1038/nmat2770, 10.1038/NMAT2770]

[8] Theory of optical gain of Ge-SixGeySn1-x-y quantum-well lasers [J].

Chang, Shu-Wei ;

Chuang, Shun Lien .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2007, 43 (3-4) :249-256

[9] Optical critical points of thin-film Ge1-ySny alloys:: A comparative Ge1-ySny/Ge1-xSix study [J].

D'Costa, VR ;

Cook, CS ;

Birdwell, AG ;

Littler, CL ;

Canonico, M ;

Zollner, S ;

Kouvetakis, J ;

Menéndez, J .

PHYSICAL REVIEW B, 2006, 73 (12)

[10] Optically pumped lasing at 3 μm from compositionally graded GeSn with tin up to 22.3% [J].