Fast pick up technique for high quality heterostructures of bilayer graphene and hexagonal boron nitride

被引：333

作者：

Zomer, P. J. ^{[1
]}

Guimaraes, M. H. D. ^{[1
]}

Brant, J. C. ^{[1
]}

Tombros, N. ^{[1
]}

van Wees, B. J. ^{[1
]}

机构：

[1] Univ Groningen, Zernike Inst Adv Mat, Groningen, Netherlands

来源：

APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 01期

关键词：

SCANNING-TUNNELING-MICROSCOPY; QUANTUM CAPACITANCE; SUSPENDED GRAPHENE; DIRAC FERMIONS; SUPERLATTICES; SPECTROSCOPY; CONFINEMENT; TRANSPORT; DEVICES;

D O I：

10.1063/1.4886096

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a fast method to fabricate high quality heterostructure devices by picking up crystals of arbitrary sizes. Bilayer graphene is encapsulated with hexagonal boron nitride to demonstrate this approach, showing good electronic quality with mobilities ranging from 17 000 cm(2) V-1 s(-1) at room temperature to 49 000 cm(2) V-1 s(-1) at 4.2 K, and entering the quantum Hall regime below 0.5 T. This method provides a strong and useful tool for the fabrication of future high quality layered crystal devices. (C) 2014 AIP Publishing LLC.

引用

页数：4

共 26 条

[1] Gate-defined quantum confinement in suspended bilayer graphene [J].

Allen, M. T. ;

Martin, J. ;

Yacoby, A. .

NATURE COMMUNICATIONS, 2012, 3

[2] Ultrahigh electron mobility in suspended graphene [J].

Bolotin, K. I. ;

Sikes, K. J. ;

Jiang, Z. ;

Klima, M. ;

Fudenberg, G. ;

Hone, J. ;

Kim, P. ;

Stormer, H. L. .

SOLID STATE COMMUNICATIONS, 2008, 146 (9-10) :351-355

[3] Hofstadter's butterfly and the fractal quantum Hall effect in moire superlattices [J].

Dean, C. R. ;

Wang, L. ;

Maher, P. ;

Forsythe, C. ;

Ghahari, F. ;

Gao, Y. ;

Katoch, J. ;

Ishigami, M. ;

Moon, P. ;

Koshino, M. ;

Taniguchi, T. ;

Watanabe, K. ;

Shepard, K. L. ;

Hone, J. ;

Kim, P. .

NATURE, 2013, 497 (7451) :598-602

[4] Boron nitride substrates for high-quality graphene electronics [J].

Dean, C. R. ;

Young, A. F. ;

Meric, I. ;

Lee, C. ;

Wang, L. ;

Sorgenfrei, S. ;

Watanabe, K. ;

Taniguchi, T. ;

Kim, P. ;

Shepard, K. L. ;

Hone, J. .

NATURE NANOTECHNOLOGY, 2010, 5 (10) :722-726

[5] Local Electronic Properties of Graphene on a BN Substrate via Scanning Tunneling Microscopy [J].

Decker, Regis ;

Wang, Yang ;

Brar, Victor W. ;

Regan, William ;

Tsai, Hsin-Zon ;

Wu, Qiong ;

Gannett, William ;

Zettl, Alex ;

Crommie, Michael F. .

NANO LETTERS, 2011, 11 (06) :2291-2295

[6]

Elias DC, 2011, NAT PHYS, V7, P701, DOI [10.1038/nphys2049, 10.1038/NPHYS2049]

[7] Van der Waals heterostructures [J].

Geim, A. K. ;

Grigorieva, I. V. .

NATURE, 2013, 499 (7459) :419-425

[8] Mechanical cleaning of graphene [J].

Goossens, A. M. ;

Calado, V. E. ;

Barreiro, A. ;

Watanabe, K. ;

Taniguchi, T. ;

Vandersypen, L. M. K. .

APPLIED PHYSICS LETTERS, 2012, 100 (07)

[9] Gate-Defined Confinement in Bilayer Graphene-Hexagonal Boron Nitride Hybrid Devices [J].

Goossens, Augustinus M. ;

Driessen, Stefanie C. M. ;

Baart, Tim A. ;

Watanabe, Kenji ;

Taniguchi, Takashi ;

Vandersypen, Lieven M. K. .

NANO LETTERS, 2012, 12 (09) :4656-4660

[10]

Haigh SJ, 2012, NAT MATER, V11, P764, DOI [10.1038/nmat3386, 10.1038/NMAT3386]

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