Physical investigations on MoO3 sprayed thin film for selective sensitivity applications

被引:96
作者
Boukhachem, A. [1 ]
Bouzidi, C. [2 ]
Boughalmi, R. [1 ]
Ouerteni, R. [3 ]
Kahlaoui, M. [4 ]
Ouni, B. [1 ]
Elhouichet, H. [2 ]
Amlouk, M. [1 ]
机构
[1] Univ Tunis El Manar, Fac Sci Tunis, Unite Phys Dispositifs Semicond, Tunis 2092, Tunisia
[2] Ctr Natl Rech Sci Mat, Lab Physicochim Mat Mineraux & Leurs Applicat, Hammam Lif 2050, Tunisia
[3] Ctr Rech & Technol Energie, Lab Photovolta, Hammam Lif 2050, Tunisia
[4] Univ Carthage, Fac Sci Bizerte, Lab Phys Mat, Zarzouna 7022, Tunisia
关键词
Molybdenum oxide; Urbach tailing; Raman spectroscopy; PL measurement; Impedance spectroscopy; PYROLYSIS TECHNIQUE; OPTICAL-PROPERTIES; SUBSTRATE-TEMPERATURE; ELECTRICAL-CONDUCTIVITY; RAMAN-SPECTROSCOPY; SOLAR-CELLS; ZNO; SENSORS; LAYER; SNO2;
D O I
10.1016/j.ceramint.2014.05.062
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Molybdenum trioxide (MoO3) thin films have been prepared by the spray pyrolysis technique on glass substrates at 460 degrees C using (NH4)(6)Mo7O24 center dot 4H(2)O (ACROS pure more than 99.0%) as precursor in the starting solution. X-ray analysis shows that MoO3 thin film crystallizes in orthorhombic structure with a preferred orientation of the crystallites along (020) and (040) directions. The surface topography of these films was performed by atomic force microscopy and the optical properties were investigated through reflectance and transmittance measurements. The optical band gap energy value is about 3.46 eV and the Urbach energy is of the order of 191 meV. Raman spectroscopy shows the bands' positions corresponding to alpha-MoO3 phase. PL measurements show two large bands located at 375 nm and 575 nm respectively. Finally, the electric conductivity of MoO3 thin film was investigated using impedance spectroscopy technique in the frequency range 5 Hz-13 MHz at various temperatures (300-500 degrees C). The variation of the conductivity in terms of the temperature is characterized by the existence of two ranges with activation energy of 1.00, and 0.42 eV. AC conductivity of MoO3 thin films is investigated through Jonsher law. (C) 2014 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
引用
收藏
页码:13427 / 13435
页数:9
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