Simulation and study on the temperature effect of the a-Ta2O5 ISFET

被引：0
作者：
Chou, JC [1 ]
Li, YS [1 ]
机构：
[1] Natl Yunlin Univ Sci & Technol, Dept Elect & Informat Engn, Yunlin 640, Taiwan
来源：
ADVANCED PHOTONIC SENSORS AND APPLICATIONS | 1999年 / 3897卷
关键词：
a-Ta2O5; ISFET; temperature coefficient; pH sensitivity; pK(a); pK(b);
D O I：
10.1117/12.369378
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In the research, we simulated the temperature characteristics of the a-Ta2O5 ISFET by the Gouy-Chapman-Stern theory. The values of the pK(a) and pK(b) would be induced to calculate the temperature coefficients of the a-Ta2O5 ISFETs for predicting the behaviours of the a-Ta2O5 ISFET under different temperatures. In the experiment we used the method finding the V-GS values of the experimental curves by fixed I-DS value to get the pH sensitivities at different temperatures. By using the same way we could change the temperatures to find the temperature coefficients in different pH solutions. The relationship of the pH sensitivities of a-Ta2O5 ISFET versus the temperatures were the linear. Oppositely the curves of the temperature coefficients is not linear obviously.
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页码：750 / 757
页数：2
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