In situ heating and thermal effects in Auger electron spectroscopy for GaN

被引:1
作者
Fu-chun Xu [1 ]
Qi-he Zhang
Dan-xia Cen
机构
[1] Xiamen Univ, Anal & Testing Ctr, Xiamen 361005, Peoples R China
[2] Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China
关键词
ultra-high-vacuum; Auger electron spectroscopy; heating system; in situ; Auger line shape;
D O I
10.1360/cjcp2006.19(3).200.3
中图分类号
O64 [物理化学(理论化学)、化学物理学]; O56 [分子物理学、原子物理学];
学科分类号
070203 ; 070304 ; 081704 ; 1406 ;
摘要
An in situ heating system was built for the Auger electron spectroscopy to investigate the thermal effect of Auger lines. A GaN sample was studied in this system. The kinetic energy of Ga LMM and MVV Auger lines were observed to shift negatively with temperature increasing. By using ab initio calculation, the theoretical Ga MVV Auger line shape was fit, which well reflects the inner property of the line. The Auger shift with heating is related with the valence electron rearrangement in the thermal expansion of the local bonds.
引用
收藏
页码:200 / 202
页数:3
相关论文
共 11 条
[1]  
Briggs D., 1990, PRACTICAL SURFACE AN
[2]   High-spatial-resolution strain measurements by Auger electron spectroscopy in epitaxial-lateral-overgrowth GaN [J].
Cai, DJ ;
Xu, FC ;
Kang, JY ;
Gibart, P ;
Beaumont, B .
APPLIED PHYSICS LETTERS, 2005, 86 (21) :1-3
[3]   GROUND-STATE OF THE ELECTRON-GAS BY A STOCHASTIC METHOD [J].
CEPERLEY, DM ;
ALDER, BJ .
PHYSICAL REVIEW LETTERS, 1980, 45 (07) :566-569
[4]  
FEIBELMAN PJ, 1977, PHYS REV B, V15, P5499
[5]   THE GROWTH AND PROPERTIES OF GROUP-III NITRIDES [J].
FOXON, CT ;
CHENG, TS ;
NOVIKOV, SV ;
LACKLISON, DE ;
JENKINS, LC ;
JOHNSTON, D ;
ORTON, JW ;
HOOPER, SE ;
BABAALI, N ;
TANSLEY, TL ;
TRETYAKOV, VV .
JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) :892-896
[6]   INHOMOGENEOUS ELECTRON-GAS [J].
RAJAGOPAL, AK ;
CALLAWAY, J .
PHYSICAL REVIEW B, 1973, 7 (05) :1912-1919
[7]   SELF-CONSISTENT EQUATIONS INCLUDING EXCHANGE AND CORRELATION EFFECTS [J].
KOHN, W ;
SHAM, LJ .
PHYSICAL REVIEW, 1965, 140 (4A) :1133-&
[8]   CORE-VALENCE (KLV, KVV, LVV) AUGER AND HIGH-RESOLUTION VALENCE-BAND XPS SPECTRA OF ALUMINUM - A COMPARISON WITH THE RESULTS OF CLUSTER MO CALCULATIONS [J].
KOVACS, Z ;
KOVER, L ;
VARGA, D ;
WEIGHTMAN, P ;
PALINKAS, J ;
ADACHI, H .
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1995, 72 :157-161
[9]   Annealing study of ion implanted GaN [J].
Liu, C ;
Wenzel, A ;
Gerlach, JW ;
Fan, XF ;
Rauschenbach, B .
SURFACE & COATINGS TECHNOLOGY, 2000, 128 :455-460
[10]  
Moulder J.F., 1979, HDB XRAY PHOTOELECTR