Impact of crystalline phase of Ni-full-silicide gate electrode on TDDB reliability of HfSiON gate stacks

被引：4

作者：

Onizawa, Takashi ^{[1
]}

Terai, Masayuki ^{[1
]}

Toda, Akio ^{[1
]}

Oshida, Makiko ^{[1
]}

Ikarashi, Nobuyuki ^{[1
]}

Hase, Takashi ^{[1
]}

Fujieda, Shinji ^{[1
]}

Watanabe, Hirohito ^{[1
]}

机构：

[1] NEC Corp Ltd, Syst Devices Res Labs, 1120 Shimokuzawa, Sagamihara, Kanagawa 2291198, Japan

来源：

2006 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 44TH ANNUAL | 2006年

关键词：

phase-controlled; Ni-full-silicide (PC-FUSI); metal/high-k gate stack; TDDB reliability; mechanical strain;

D O I：

10.1109/RELPHY.2006.251216

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigated the influences of gate metals (poly-Si, NiSi, Ni3Si) on the time dependent dielectric breakdown (TDDB) reliability of phase-controlled Ni-full-silicide/HfSiON n-FETs. The TDDB reliability of the NiSi-electrode FETs was comparable to that of poly-Si-electrode FETs. However, the reliability was degraded by further Ni-enriching to Ni3Si. We presume that the degradation of the base SiO2 layer is responsible for this. We do not relate the TDDB degradation to Ni diffusion into the insulator, but rather to the strain that is higher in Ni3Si samples.

引用

页码：195 / +

页数：2

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