SHF-transistors parameters optimization by germanium doping of silicon monocrystal

被引：0

作者：

Afanas'ev, VV ^{[1
]}

Brinkevich, DI ^{[1
]}

Korzhenevski, AG ^{[1
]}

Prosolovich, VS ^{[1
]}

Yankovski, YN ^{[1
]}

机构：

[1] Belarusian State Univ, Minsk 220050, BELARUS

来源：

11TH INTERNATIONAL CONFERENCE MICROWAVE & TELECOMMUNICATION TECHNOLOGY, CONFERENCE PROCEEDINGS | 2001年

关键词：

D O I：

10.1109/CRMICO.2001.961631

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Optimization method of the SHF-transistors parameters has been designed. It is shown that germanium incorporation into SiO2 reduces the leakage current and increases the breakdown voltage of MOS-structures.

引用

页码：464 / 466

页数：3

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