Laser-produced plasma light source development for extreme ultraviolet lithography

被引：13

作者：

Komori, H ^{[1
]}

Soumagne, G ^{[1
]}

Abe, T ^{[1
]}

Suganuma, T ^{[1
]}

Imai, Y ^{[1
]}

Someya, H ^{[1
]}

Takabayashi, Y ^{[1
]}

Endo, A ^{[1
]}

Toyoda, K ^{[1
]}

机构：

[1] Hiratsuka Res & Dev Ctr, Extreme Ultraviolet Lithog Syst Dev Assoc, EUVA, Hiratsuka, Kanagawa 2548567, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2004年 / 43卷 / 6B期

关键词：

laser-produced plasma; EUV light source; EUV lithography; fast ion; collector mirror damage;

D O I：

10.1143/JJAP.43.3707

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present recent results of our laser-produced plasma light source development for next-generation lithography. The plasma target of the extreme ultraviolet (EUV) source system is a liquid xenon jet and the driver laser is a 600 W Nd:YAG laser operating at a repetition rate of 10 kHz. A EUV output power of 2.2 W at 13.5 nm (2% bandwidth, 2pi sr) having a stability of 0.72% (1sigma, 50-pulse moving average) has been achieved. Related to future collector mirror lifetime considerations, fast ions from the laser-produced plasma have been characterized by time-of-flight (TOF) measurements. Using a low repetition rate 8-ns, 100-mJ Nd:YAG laser Xe+ to Xe6+ ions were observed with Xe2+ being the main charge state. In addition, the effects of fast ions on Mo/Si multilayer mirrors have been studied using a Xe ion gun. Ion sputtering of the multilayer structure is the main damage mechanism but layer boundary mixing and surface roughness increase are also observed.

引用

页码：3707 / 3712

页数：6

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