Memristive behaviour of Si-Al oxynitride thin films: the role of oxygen and nitrogen vacancies in the electroforming process

被引：10

作者：

Blazquez, O. ^{[1
,2
]}

Martin, G. ^{[1
,2
]}

Camps, I. ^{[3
,4
]}

Mariscal, A. ^{[3
]}

Lopez-Vidrier, J. ^{[5
]}

Ramirez, J. M. ^{[1
,2
]}

Hernandez, S. ^{[1
,2
]}

Estrade, S. ^{[1
,2
]}

Peiro, F. ^{[1
,2
]}

Serna, R. ^{[3
]}

Garrido, B. ^{[1
,2
]}

机构：

[1] Univ Barcelona, Dept Engn Elect, MIND, Marti i Franques 1, E-08028 Barcelona, Spain

[2] Univ Barcelona, Inst Nanosci & Nanotechnol IN2UB, Av Joan 23 S-N, E-08028 Barcelona, Spain

[3] CSIC, IO, Inst Opt Daza de Valdes, Laser Proc Grp, Serrano 121, E-28006 Madrid, Spain

[4] UNAM, Inst Ciencias Fis, Av Univ S-N, Cuernavaca 62210, Morelos, Mexico

[5] Albert Ludwigs Univ Freiburg, Univ Freiburg, Dept Microsyst Engn IMTEK, Lab Nanotechnol, Georges Kohler Allee 103, D-79110 Freiburg, Germany

来源：

NANOTECHNOLOGY | 2018年 / 29卷 / 23期

关键词：

resistive switching; chemical composition; SiAlON thin films; charge transport; RESISTIVE SWITCHING MEMORIES; RESISTANCE; SYSTEMS; DEVICES; OXIDE;

D O I：

10.1088/1361-6528/aab744

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The resistive switching properties of silicon-aluminium oxynitride (SiAlON) based devices have been studied. Electrical transport mechanisms in both resistance states were determined, exhibiting an ohmic behaviour at low resistance and a defect-related Poole-Frenkel mechanism at high resistance. Nevertheless, some features of the Al top-electrode are generated during the initial electroforming, suggesting some material modifications. An in-depth microscopic study at the nanoscale has been performed after the electroforming process, by acquiring scanning electron microscopy and transmission electron microscopy images. The direct observation of the devices confirmed features on the top electrode with bubble-like appearance, as well as some precipitates within the SiAlON. Chemical analysis by electron energy loss spectroscopy has demonstrated that there is an out-diffusion of oxygen and nitrogen ions from the SiAlON layer towards the electrode, thus forming silicon-rich paths within the dielectric layer and indicating vacancy change to be the main mechanism in the resistive switching.

引用

页数：8

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