Fluorinated Acid Amplifiers for EUV Lithography

被引：28

作者：

Kruger, Seth ^{[1
]}

Revuru, Sri ^{[1
]}

Higgins, Craig ^{[1
]}

Gibbons, Sarah ^{[1
]}

Freedman, Daniel A. ^{[1
]}

Yueh, Wang ^{[1
]}

Younkin, Todd R. ^{[1
]}

Brainard, Robert L. ^{[1
]}

机构：

[1] SUNY Albany, Coll Nanoscale Sci & Engn, Albany, NY 12203 USA

来源：

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY | 2009年 / 131卷 / 29期

关键词：

AMPLIFICATION; PHOTORESISTS; MOLECULES;

D O I：

10.1021/ja901448d

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Five new compounds were synthesized for use as acid amplifiers in EUV (13.5 nm) photoresists. Four compounds act as acid amplifiers and decompose by autocatatytic kinetics to generate fluorinated sulfonic acids, essential for the simultaneous improvement of resolution, sensitivity, and line edge roughness (LER) in EUV photoresists. The decomposition rates were studied using F-19 NMR in the presence and absence of 1.2 equiv of tri-tert-butylpyridine. Three acid amplifiers decomposed 490, 1360, and 1430 times faster without base than with base. Preliminary lithographic evaluations show that cis-1-methyt-2-(4-(trifluoromethyl)phenylsulfonyloxy)cyclohexyl acetate simultaneously improves the resolution, LER, and sensitivity of an EUV photoresist.

引用

页码：9862 / +

页数：3

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