Electric field-induced strain of PbZrO3 films

被引：5

作者：

Kanno, Isaku ^{[1
]}

Inoue, Takashi ^{[1
]}

Suzuki, Takaaki ^{[1
]}

Kotera, Hidetoshi ^{[1
]}

Wasa, Kiyotaka ^{[1
]}

机构：

[1] Kyoto Univ, Dept Micro Engn, Sakyo Ku, Kyoto 6068501, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2006年 / 45卷 / 9B期

关键词：

antiferroelectric; PbZrO3; films; electric field-induced strain;

D O I：

10.1143/JJAP.45.7258

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this paper, we report an electric field-induced strain of antiferroelectric (AFE) PbZrO3 (PZ) films deposited by rf-sputtering. The PZ films grown on the (001)Pt/(001)MgO substrate are preferentially oriented along the c axis in a tetragonal system which is perpendicular to the AFE polar direction. On the other hand, the PZ films on the (111)Pt/Ti/Si substrate have a random orientation, and they show, clear double P-E hysteresis loops, representing the AFE-ferroelectric (FE) phase transition caused by the Application of an electric field. The transverse strain induced by the electric field is evaluated by the measurements of tip displacement of PZ/substrate unimorph cantilevers. The PZ films on the Pt/Ti/Si substrate exhibit clear strain jump corresponding to the AFE-FE phase transition, and a maximum transverse strain of 5 x 10(-5) is obtained at an electric field of -150 kV/cm.

引用

页码：7258 / 7261

页数：4

共 19 条

[1] Oxide nanostructures through self-assembly [J].