Debye temperature and melting point of ternary chalcopyrite semiconductors

被引：58

作者：

Kumar, V. ^{[1
]}

Shrivastava, A. K. ^{[1
]}

Banerji, Rajib ^{[1
]}

Dhirhe, D. ^{[1
]}

机构：

[1] Indian Sch Mines Univ, Dept Elect & Instrumentat, Dhanbad 826004, Bihar, India

来源：

SOLID STATE COMMUNICATIONS | 2009年 / 149卷 / 25-26期

关键词：

Ternary chalcopyrite semiconductors; Tetrahedral semiconductors; Debye temperature; Melting temperature; COMPOUND SEMICONDUCTORS; ELASTIC-CONSTANTS; A(I)B(III)C(2)(VI); IONICITY; HEAT; BOND;

D O I：

10.1016/j.ssc.2009.04.003

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Debye temperature (theta(D)) and melting point (T(m)) of A(I)B(III)C(2)(VI) and A(II)B(IV)C(2)(V) chalcopyrite semiconductors have been discussed. Four simple relations have been proposed to calculate the values of theta(D). Two are based on plasmon energy data and one each on T(m) and molecular weight (W). We have also proposed two simple relations to calculate T(m) of these semiconductors. One is based on plasmon energy and the other on W. The calculated values of theta(D) and T(m) from all equations are compared with the experimental values and the values reported by different workers. Reasonably good agreement has been obtained between them. (C) 2009 Elsevier Ltd. All rights reserved.

引用

页码：1008 / 1011

页数：4

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