Gettering Mechanism of Copper in n-Type Silicon Wafers

被引：1

作者：

Ozaki, Rie ^{[1
]}

Torigoe, Kazuhisa ^{[1
]}

Mizuno, Taisuke ^{[1
]}

Yamamoto, Kazuhiro ^{[1
]}

机构：

[1] SUMCO Corp, Technol Div, Adv Evaluat & Technol Dev Dept, 1-52 Kubara,Yamashiro Cho, Imari, Saga 8494256, Japan

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2019年 / 216卷 / 17期

关键词：

copper; copper precipitation; gettering; n-type silicon; power device; OXYGEN-RELATED DEFECTS; P-TYPE; TRANSITION-METALS; CZOCHRALSKI; SOLUBILITY; DIFFUSION; IRON; IMPURITIES; DEPENDENCE; NICKEL;

D O I：

10.1002/pssa.201900220

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The dependence of the gettering efficiency for copper impurity in n-type silicon wafers on the concentration of a dopant such as phosphorus, arsenic, or antimony is investigated by chemical analysis of the copper concentration and the observation of copper precipitates. It is found that the gettering efficiency decreases gradually with increasing dopant concentration in the range of 10(14)-10(19) cm(-3) and increases rapidly at concentrations higher than 10(19) cm(-3). Copper precipitates are observed in the bulk of silicon wafers doped with phosphorus in the concentration range of 10(14)-10(19) cm(-3), suggesting that the relaxation gettering of copper occurs. In contrast, no copper precipitates are observed at concentrations above 10(19) cm(-3). It is suggested that segregation gettering occurs as a result of the pairing reaction between copper and heavily doped phosphorus. It is concluded that the gettering mechanism of copper in n-type silicon wafers changes from relaxation gettering to segregation gettering with increasing dopant concentration.

引用

页数：7

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