Electrons and holes in phosphorene

被引：166
作者：
Li, Pengke [1 ]
Appelbaum, Ian
机构：
[1] Univ Maryland, Dept Phys, College Pk, MD 20742 USA
来源：
PHYSICAL REVIEW B | 2014年 / 90卷 / 11期
基金：
美国国家科学基金会;
关键词：
FIELD-EFFECT TRANSISTORS; LAYER BLACK PHOSPHORUS; TIGHT-BINDING APPROACH; OPTICAL-PROPERTIES; BAND-STRUCTURE; CRYSTAL-STRUCTURE; SINGLE-CRYSTALS; MOBILITY;
D O I：
10.1103/PhysRevB.90.115439
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We present a symmetry analysis of electronic band structure including spin-orbit interaction close to the insulating gap edge in monolayer black phosphorus ("phosphorene"). Expressions for energy dispersion relation and spin-dependent eigenstates for electrons and holes are found via simplification of a perturbative expansion in wave vector k away from the zone center using elementary group theory. Importantly, we expose the underlying symmetrics giving rise to substantial anisotropy in optical absorption, charge, and spin transport properties, and reveal the mechanism responsible for valence band distortion and possible lack of a true direct gap.
引用
收藏
页数：12
相关论文
共 50 条
[21]  
Jansen R, 2012, NAT MATER, V11, P400, DOI [10.1038/NMAT3293, 10.1038/nmat3293]
[22]   ANOMALOUS SUPERCONDUCTIVITY IN BLACK PHOSPHORUS UNDER HIGH-PRESSURES [J].
KAWAMURA, H ;
SHIROTANI, I ;
TACHIKAWA, K .
SOLID STATE COMMUNICATIONS, 1984, 49 (09) :879-881
[23]   THE ELECTRICAL PROPERTIES OF BLACK PHOSPHORUS [J].
KEYES, RW .
PHYSICAL REVIEW, 1953, 92 (03) :580-584
[24]   Electric field effect in ultrathin black phosphorus [J].
Koenig, Steven P. ;
Doganov, Rostislav A. ;
Schmidt, Hennrik ;
Castro Neto, A. H. ;
Oezyilmaz, Barbaros .
APPLIED PHYSICS LETTERS, 2014, 104 (10)
[25]   Epitaxial growth of a silicene sheet [J].
Lalmi, Boubekeur ;
Oughaddou, Hamid ;
Enriquez, Hanna ;
Kara, Abdelkader ;
Vizzini, Sebastien ;
Ealet, Benidicte ;
Aufray, Bernard .
APPLIED PHYSICS LETTERS, 2010, 97 (22)
[26]  
Li LK, 2014, NAT NANOTECHNOL, V9, P372, DOI [10.1038/nnano.2014.35, 10.1038/NNANO.2014.35]
[27]   Spin-Orbit Symmetries of Conduction Electrons in Silicon [J].
Li, Pengke ;
Dery, Hanan .
PHYSICAL REVIEW LETTERS, 2011, 107 (10)
[28]   Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility [J].
Liu, Han ;
Neal, Adam T. ;
Zhu, Zhen ;
Luo, Zhe ;
Xu, Xianfan ;
Tomanek, David ;
Ye, Peide D. .
ACS NANO, 2014, 8 (04) :4033-4041
[29]   EFFECTS OF SPIN-ORBIT COUPLING IN SI AND GE [J].
LIU, L .
PHYSICAL REVIEW, 1962, 126 (04) :1317-&
[30]   Tunable optical properties of multilayer black phosphorus thin films [J].
Low, Tony ;
Rodin, A. S. ;
Carvalho, A. ;
Jiang, Yongjin ;
Wang, Han ;
Xia, Fengnian ;
Neto, A. H. Castro .
PHYSICAL REVIEW B, 2014, 90 (07)
12345