Electrons and holes in phosphorene

被引：166

作者：

Li, Pengke ^{[1
]}

Appelbaum, Ian

机构：

[1] Univ Maryland, Dept Phys, College Pk, MD 20742 USA

来源：

PHYSICAL REVIEW B | 2014年 / 90卷 / 11期

基金：

美国国家科学基金会;

关键词：

FIELD-EFFECT TRANSISTORS; LAYER BLACK PHOSPHORUS; TIGHT-BINDING APPROACH; OPTICAL-PROPERTIES; BAND-STRUCTURE; CRYSTAL-STRUCTURE; SINGLE-CRYSTALS; MOBILITY;

D O I：

10.1103/PhysRevB.90.115439

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present a symmetry analysis of electronic band structure including spin-orbit interaction close to the insulating gap edge in monolayer black phosphorus ("phosphorene"). Expressions for energy dispersion relation and spin-dependent eigenstates for electrons and holes are found via simplification of a perturbative expansion in wave vector k away from the zone center using elementary group theory. Importantly, we expose the underlying symmetrics giving rise to substantial anisotropy in optical absorption, charge, and spin transport properties, and reveal the mechanism responsible for valence band distortion and possible lack of a true direct gap.

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页数：12

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