The influence of nanoscale atomic-layer-deposited alumina coating on the fatigue behavior of polycrystalline silicon thin films

被引：20

作者：

Budnitzki, M. ^{[1
]}

Pierron, O. N. ^{[1
]}

机构：

[1] Georgia Inst Technol, George W Woodruff Sch Mech Engn, Atlanta, GA 30332 USA

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 14期

基金：

美国国家科学基金会;

关键词：

alumina; atomic layer deposition; cantilevers; fatigue; nanostructured materials; semiconductor thin films; silicon; transmission electron microscopy; MECHANICAL-PROPERTIES; FAILURE; MEMS;

D O I：

10.1063/1.3112565

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influence of atomic-layer-deposited alumina surface coatings on the fatigue of polycrystalline silicon thin films was investigated. Tests were performed on 2-mu m-thick notched cantilever-beam structures actuated at resonance (similar to 40 kHz) that were coated with similar to 20 nm of alumina deposited at 100 degrees C. The coated devices show a drastically different frequency evolution behavior as compared to uncoated specimens, while no surface oxide thickening during cycling is observed in bright-field transmission electron microscopy. Both results are consistent with a surface degradation mechanism for polycrystalline silicon fatigue such as the reaction-layer mechanism. The improved frequency evolution has the potential of increasing the performance of resonator-based microelectromechanical system sensors.

引用

页数：3

共 25 条

[1] GPS/INS uses low-cost MEMS IMU [J].

Brown, AK .

IEEE AEROSPACE AND ELECTRONIC SYSTEMS MAGAZINE, 2005, 20 (09) :3-10

[2] Harsh military environments and microelectromechanical (MEMS) devices [J].

Brown, TG .

PROCEEDINGS OF THE IEEE SENSORS 2003, VOLS 1 AND 2, 2003, :753-760

[3] Highly localized surface oxide thickening on polycrystalline silicon thin films during cyclic loading in humid environments [J].

Budnitzki, M. ;

Pierron, O. N. .

ACTA MATERIALIA, 2009, 57 (10) :2944-2955

[4]

BUDNITZKI M, 2008, THESIS GEORGIA I TEC

[5] MEMS and mil/aero .... technology push and market pull [J].

Clifford, T .

MEMS DESIGN, FABRICATION, CHARACTERIZATION, AND PACKAGING, 2001, 4407 :1-9

[6] Biocompatibility of atomic layer-deposited alumina thin films [J].

Finch, Dudley S. ;

Oreskovic, Tammy ;

Ramadurai, Krishna ;

Herrmann, Cari F. ;

George, Steven M. ;

Mahajan, Roop L. .

JOURNAL OF BIOMEDICAL MATERIALS RESEARCH PART A, 2008, 87A (01) :100-106

[7] Diffusion-reaction modeling of silicon oxide interlayer growth during thermal annealing of high dielectric constant materials on silicon [J].

Gopireddy, Deepthi ;

Takoudis, Christos G. .

PHYSICAL REVIEW B, 2008, 77 (20)

[8] Low-temperature Al2O3 atomic layer deposition [J].

Groner, MD ;

Fabreguette, FH ;

Elam, JW ;

George, SM .

CHEMISTRY OF MATERIALS, 2004, 16 (04) :639-645

[9] High-resolution depth profiling in ultrathin Al2O3 films on Si [J].

Gusev, EP ;

Copel, M ;

Cartier, E ;

Baumvol, IJR ;

Krug, C ;

Gribelyuk, MA .

APPLIED PHYSICS LETTERS, 2000, 76 (02) :176-178

[10] Atomic layer deposited protective coatings for micro-electromechanical systems [J].

Hoivik, ND ;

Elam, JW ;

Linderman, RJ ;

Bright, VM ;

George, SM ;

Lee, YC .

SENSORS AND ACTUATORS A-PHYSICAL, 2003, 103 (1-2) :100-108

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