Long-term air-stable n-type doped graphene by multiple lamination with polyethyleneimine

被引:11
作者
Cha, Myoung-Jun [1 ]
Song, Wooseok [3 ]
Kim, Yooseok [1 ,4 ]
Jung, Dae Sung [2 ]
Jung, Min Wook [1 ,3 ]
Lee, Su Il [1 ]
Adhikari, Prashanta Dhoj [1 ]
An, Ki-Seok [3 ]
Park, Chong-Yun [1 ,2 ]
机构
[1] Sungkyunkwan Univ, Dept Phys, Suwon 440746, South Korea
[2] Sungkyunkwan Univ, Dept Energy Sci, Suwon 440746, South Korea
[3] Korea Res Inst Chem Technol, Thin Film Mat Res Grp, Taejon 305600, South Korea
[4] Korea Basic Sci Inst, Div Mat Sci, Taejon 305333, South Korea
基金
新加坡国家研究基金会;
关键词
Chemical vapor deposition - Laminating - Carrier concentration;
D O I
10.1039/c4ra04518a
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We demonstrate homogeneous and air-stable n-type doping of graphene grown by thermal chemical vapor deposition. Laminated Polyethyleneimine (PEI) layers fabricated by a simple polymer solution coating were employed. The doping stability of multiple laminated structures (graphene/PEI, PEI/graphene, and graphene/PEI/graphene) was systematically investigated. The resulting graphene/PEI/graphene laminated structure was highly stable in air. Moreover, the work function and carrier concentration of doped graphene can be tuned by altering the laminated structure.
引用
收藏
页码:37849 / 37853
页数:5
相关论文
共 23 条
[1]  
Bae S, 2010, NAT NANOTECHNOL, V5, P574, DOI [10.1038/nnano.2010.132, 10.1038/NNANO.2010.132]
[2]   Facile Formation of Graphene P-N Junctions Using Self-Assembled Monolayers [J].
Baltazar, Jose ;
Sojoudi, Hossein ;
Paniagua, Sergio A. ;
Kowalik, Janusz ;
Marder, Seth R. ;
Tolbert, Laren M. ;
Graham, Samuel ;
Henderson, Clifford L. .
JOURNAL OF PHYSICAL CHEMISTRY C, 2012, 116 (36) :19095-19103
[3]   Doping dependence of the Raman peaks intensity of graphene close to the Dirac point [J].
Casiraghi, C. .
PHYSICAL REVIEW B, 2009, 80 (23)
[4]   Ionic Screening of Charged-Impurity Scattering in Graphene [J].
Chen, Fang ;
Xia, Jilin ;
Tao, Nongjian .
NANO LETTERS, 2009, 9 (04) :1621-1625
[5]   Oxidation Resistance of Graphene-Coated Cu and Cu/Ni Alloy [J].
Chen, Shanshan ;
Brown, Lola ;
Levendorf, Mark ;
Cai, Weiwei ;
Ju, Sang-Yong ;
Edgeworth, Jonathan ;
Li, Xuesong ;
Magnuson, Carl W. ;
Velamakanni, Aruna ;
Piner, Richard D. ;
Kang, Junyong ;
Park, Jiwoong ;
Ruoff, Rodney S. .
ACS NANO, 2011, 5 (02) :1321-1327
[6]   Hot Carrier-Assisted Intrinsic Photoresponse in Graphene [J].
Gabor, Nathaniel M. ;
Song, Justin C. W. ;
Ma, Qiong ;
Nair, Nityan L. ;
Taychatanapat, Thiti ;
Watanabe, Kenji ;
Taniguchi, Takashi ;
Levitov, Leonid S. ;
Jarillo-Herrero, Pablo .
SCIENCE, 2011, 334 (6056) :648-652
[7]   Functionalization of Graphene: Covalent and Non-Covalent Approaches, Derivatives and Applications [J].
Georgakilas, Vasilios ;
Otyepka, Michal ;
Bourlinos, Athanasios B. ;
Chandra, Vimlesh ;
Kim, Namdong ;
Kemp, K. Christian ;
Hobza, Pavel ;
Zboril, Radek ;
Kim, Kwang S. .
CHEMICAL REVIEWS, 2012, 112 (11) :6156-6214
[8]   Work-Function Decrease of Graphene Sheet Using Alkali Metal Carbonates [J].
Kwon, Ki Chang ;
Choi, Kyoung Soon ;
Kim, Buem Joon ;
Lee, Jong-Lam ;
Kim, Soo Young .
JOURNAL OF PHYSICAL CHEMISTRY C, 2012, 116 (50) :26586-26591
[9]   Measurement of the elastic properties and intrinsic strength of monolayer graphene [J].
Lee, Changgu ;
Wei, Xiaoding ;
Kysar, Jeffrey W. ;
Hone, James .
SCIENCE, 2008, 321 (5887) :385-388
[10]   100-GHz Transistors from Wafer-Scale Epitaxial Graphene [J].
Lin, Y. -M. ;
Dimitrakopoulos, C. ;
Jenkins, K. A. ;
Farmer, D. B. ;
Chiu, H. -Y. ;
Grill, A. ;
Avouris, Ph. .
SCIENCE, 2010, 327 (5966) :662-662