Perturbation-Induced Seeding and Crystallization of Hybrid Perovskites over Surface-Modified Substrates for Optoelectronic Devices

被引:15
作者
Ahmad, Riyas [1 ,2 ,5 ]
Surendran, Abhijith [4 ]
Harikesh, P. C. [1 ,2 ,3 ]
Haselsberger, Reinhard [5 ]
Jamaludin, Nur Fadilah [1 ,2 ,3 ]
John, Rohit Abraham [3 ]
Koh, Teck Ming [1 ]
Bruno, Annalisa [1 ]
Leong, Wei Lin [4 ,6 ]
Mathews, Nripan [1 ,3 ]
Michel-Beyerle, Maria-Elisabeth [5 ]
Mhaisalkar, Subodh G. [1 ,3 ]
机构
[1] Energy Res Inst NTU ERI N, Res Techno Plaza,X Frontier Block Level 5, Singapore 637553, Singapore
[2] Nanyang Technol Univ, IGS, 50 Nanyang Ave, Singapore 639798, Singapore
[3] Nanyang Technol Univ, Sch Mat Sci & Engn, 50 Nanyang Ave, Singapore 639798, Singapore
[4] Nanyang Technol Univ, Sch Elect & Elect Engn, 50 Nanyang Ave, Singapore 639798, Singapore
[5] Nanyang Technol Univ, SPMS, Div Phys & Appl Phys, 21 Nanyang Link, Singapore 637371, Singapore
[6] Nanyang Technol Univ, Sch Chem & Biomed Engn, 70 Nanyang Dr, Singapore 637459, Singapore
基金
新加坡国家研究基金会;
关键词
lead halide perovskites; crystal growth; photodetectors; precursor colloids; antisolvent vapor crystallization; MONOLAYERS; LIGHT;
D O I
10.1021/acsami.9b05965
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Growing a monocrystalline layer of lead halide perovskites directly over substrates is necessary to completely harness their stellar properties in optoelectronic devices, as the single crystals of these materials are extremely brittle. We study the crystallization mechanism of perovskites by antisolvent vapor diffusion to its precursor solution and find that heterogeneous nucleation prevails in the process, with the crystallization dish walls providing the energy to overcome the nucleation barrier. By perturbing the system using sonication, we are able to introduce homogeneously nucleated seed crystals in the precursor solution. These seeds lead to the growth of closely packed crystals over surface-modified substrates kept in the precursor solution. This crystallization process is substrate independent and scalable and can be utilized to fabricate planar optoelectronic devices. We demonstrate a methylammonium lead iodide planar crystal photoconductor with a colossal detectivity of 1.48 X 10(13) Jones.
引用
收藏
页码:27727 / 27734
页数:8
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