Tuning of tunneling rates in quantum dots using a quantum point contact

被引:1
|
作者
Rogge, M. C. [1 ]
Fricke, C.
Harke, B.
Hohls, F.
Haug, R. J.
Wegscheider, W.
机构
[1] Leibniz Univ Hannover, Inst Festkorperphys, D-30167 Hannover, Germany
[2] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England
[3] Univ Regensburg, D-93040 Regensburg, Germany
关键词
quantum dots; quantum point contact; charge detection; tunneling rates; excited states;
D O I
10.1016/j.physe.2006.03.022
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We study the influence of asymmetric tunneling rates of a lateral quantum dot connected to source and drain leads. We use a quantum point contact (QPC) to detect charging events on the dot. Since the mean charge depends on the ratio of the tunneling rates the QPC can be used to detect symmetric configurations where both rates are equal. Thus, the transport properties of the dot can be investigated concerning this symmetry. We concentrate on the visibility of features that correspond to transitions with excited states. We interpret the results with the number of channels used for transport, the electron flow direction and the rate symmetry. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:500 / 503
页数:4
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