UV-Assisted Probing of Deep-Level Interface Traps in GaN MISHEMTs and Their Role in Threshold Voltage & Gate Leakage Instabilities

被引：33

作者：

Gupta, Sayak Dutta ^{[1
]}

Joshi, Vipin ^{[1
]}

Shankar, Bhawani ^{[1
]}

Shikha, Swati ^{[1
]}

Raghavan, Srinivasan ^{[2
]}

Shrivastava, Mayank ^{[1
]}

机构：

[1] Indian Inst Sci, DESE, Bangalore, Karnataka, India

[2] Indian Inst Sci, Ctr Nano Sci & Engn CeNSE, Bangalore, Karnataka, India

来源：

2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) | 2019年

关键词：

Deep-Level Traps; Dielectric characterization; UV Assisted Trap Excitation; GaN HEMTs; Threshold Voltage Instability;

D O I：

10.1109/irps.2019.8720595

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work demonstrates UV assisted probing of deep level traps in dielectric/GaN interface. The deep level donor traps lead to threshold voltage and gate leakage instabilities in GaN MISHEMTs. While UV exposure excites the deep traps, gate bias can sweep the trap energy state and trigger de-trapping. The recovery transient is evaluated to study the trap time constant. Besides, this work reveals a non-destructive technique to probe intrinsic traps as the UV exposure does not change the trap density across the device.

引用

页数：5

共 5 条

[1] Capacitance-Voltage Characteristics of Al2O3/AlGaN/GaN Structures and State Density Distribution at Al2O3/AlGaN Interface [J].