New findings NBTI in partially depleted SOI transistors with ultra-thin gate dielectrics

被引：5

作者：

Zhang, J ^{[1
]}

Marathe, A ^{[1
]}

Taylor, K ^{[1
]}

Zhao, E ^{[1
]}

En, B ^{[1
]}

机构：

[1] AMD, Technol Dev Grp, Sunnyvale, CA 94088 USA

来源：

2004 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS | 2004年

关键词：

D O I：

10.1109/RELPHY.2004.1315452

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：687 / 688

页数：2

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