Transparent, Low-Power Pressure Sensor Matrix Based on Coplanar-Gate Graphene Transistors

被引：196

作者：

Sun, Qijun ^{[1
,2
]}

Kim, Do Hwan ^{[3
]}

Park, Sang Sik ^{[3
]}

Lee, Nae Yoon ^{[4
]}

Zhang, Yu ^{[4
]}

Lee, Jung Heon ^{[5
]}

Cho, Kilwon ^{[2
]}

Cho, Jeong Ho ^{[1
]}

机构：

[1] Sungkyunkwan Univ, Sch Chem Engn, SKKU Adv Inst Nanotechnol SAINT, Suwon 440746, South Korea

[2] Pohang Univ Sci & Technol, Dept Chem Engn, Pohang 790784, South Korea

[3] Soongsil Univ, Dept Organ Mat & Fiber Engn, Seoul 156743, South Korea

[4] Gachon Univ, Coll BioNano Technol, Songnam 461701, South Korea

[5] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, SKKU Adv Inst Nanotechnol SAINT, Suwon 440746, South Korea

来源：

ADVANCED MATERIALS | 2014年 / 26卷 / 27期

基金：

新加坡国家研究基金会;

关键词：

FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; LARGE-AREA; ELECTRONIC SKIN; DIELECTRICS; DEVICES;

D O I：

10.1002/adma.201400918

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A novel device architecture for preparing a transparent and low-voltage graphene pressure-sensor matrix on plastic and rubber substrates is demonstrated. The coplanar gate configuration of the graphene transistor enables a simplified procedure. The resulting devices exhibit excellent device performance, including a high transparency of ca. 80% in the visible range, a low operating voltage less than 2 V, a high pressure sensitivity of 0.12 kPa(-1), and excellent mechanical durability over 2500 cycles.

引用

页码：4735 / +

页数：7

共 31 条

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