CMOS compatible monolithic multi-layer Si3N4-on-SOI platform for low-loss high performance silicon photonics dense integration

被引：103

作者：

Huang, Ying ^{[1
]}

Song, Junfeng ^{[1
]}

Luo, Xianshu ^{[1
]}

Liow, Tsung-Yang ^{[1
]}

Lo, Guo-Qiang ^{[1
]}

机构：

[1] ASTAR, Inst Microelect, Singapore 117685, Singapore

来源：

OPTICS EXPRESS | 2014年 / 22卷 / 18期

关键词：

POLARIZATION ROTATOR;

D O I：

10.1364/OE.22.021859

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We demonstrated a low-loss CMOS-compatible multi-layer platform using monolithic back-end-of-line (BEOL) integration. 0.8dB/cm propagation loss is measured for the PECVD Si3N4 waveguide at 1580nm wavelength. The loss is further reduced to 0.24dB/cm at 1270nm wavelength, justifying the platform's feasibility for O-band operation. An inter-layer transition coupler is designed, achieving less than 0.2dB/transition loss across 70nm bandwidth. This is the lowest inter-layer transition loss ever reported. A thermally tuned micro-ring filter is also integrated on the platform, with performance comparable to similar device on SOI platform. (C) 2014 Optical Society of America

引用

收藏

页码：21859 / 21865

页数：7

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