On the simulation of carrier dynamics in terahertz photoconductive antennas

被引：0

作者：

Moreno, E. ^{[1
]}

Pantoja, M. F. ^{[1
]}

Garcia, S. G. ^{[1
]}

Roldan, J. B. ^{[2
]}

Ruiz, F. G. ^{[2
]}

Bretones, A. R. ^{[1
]}

Martin, R. G. ^{[1
]}

机构：

[1] Univ Granada, Dept Electromagnet & Phys Matter, Granada, Spain

[2] Univ Granada, Dept Elect, Granada, Spain

来源：

2013 7TH EUROPEAN CONFERENCE ON ANTENNAS AND PROPAGATION (EUCAP) | 2013年

关键词：

Photoconductive antennas; Terahertz sources; Semiconductor device modeling; TRANSIENTS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This communication shows the relevance of accounting for accurate physical models of carrier dynamics for the simulation of radiative semiconductor photoconductive devices in the terahertz operation regime. In particular, a significant influence of the semiconductor biased state was displayed for calculating the radiated electromagnetic field at the broadside direction. Comparison with experimental measurements demonstrates the superior performance of numerical schemes, including a detailed description of the biasing, considering not only the electric potential but also the carrier dynamics and local mobilities.

引用

页码：749 / +

页数：2

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