AlGaInP light-emitting diodes with SACNTs as current-spreading layer

被引：7

作者：

Guo, Xia ^{[1
]}

Guo, Chun Wei ^{[1
]}

Jin, Yuan Hao ^{[2
,3
]}

Chen, Yu ^{[1
]}

Li, Qun Qing ^{[2
,3
]}

Fan, Shou Shan ^{[2
,3
]}

机构：

[1] Beijing Univ Technol, Sch Elect Informat & Control Engn, Beijing 100124, Peoples R China

[2] Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China

[3] Tsinghua Univ, Tsinghua Foxconn Nanotechnol Res Ctr, Beijing 100084, Peoples R China

来源：

NANOSCALE RESEARCH LETTERS | 2014年 / 9卷

基金：

中国国家自然科学基金;

关键词：

AlGaInP; Light-emitting diodes (LEDs); Super-aligned carbon nanotube (SACNTs); Current-spreading; CARBON NANOTUBES;

D O I：

10.1186/1556-276X-9-171

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Transparent conductive current-spreading layer is important for quantum efficiency and thermal performance of light-emitting diodes (LEDs). The increasing demand for tin-doped indium oxide (ITO) caused the price to greatly increase. Super-aligned carbon nanotubes (SACNTs) and Au-coated SACNTs as current-spreading layer were applied on AlGaInP LEDs. The LEDs with Au-coated SACNTs showed good current spreading effect. The voltage bias at 20 mA dropped about 0.15 V, and the optical power increased about 10% compared with the LEDs without SACNTs.

引用

页码：1 / 5

页数：5

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