High-quality ZnO epilayers grown on Zn-face ZnO substrates by plasma-assisted molecular beam epitaxy

被引:93
作者
Kato, H
Sano, M
Miyamoto, K
Yao, T
机构
[1] Stanley Elect Co Ltd, Ctr Res & Dev, Aoba Ku, Yokohama, Kanagawa 2250014, Japan
[2] Tohoku Univ, Interdisciplinary Res Ctr, Aoba Ku, Sendai, Miyagi 9808578, Japan
关键词
photoluminescence; polarity; X-ray diffraction; molecular beam epitaxy; zinc compounds; semiconducting II-VI materials;
D O I
10.1016/j.jcrysgro.2004.02.021
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
High-quality ZnO epilayers have been grown on Zn-face ZnO substrates by plasma-assisted molecular beam epitaxy. With increasing O/Zn flux ratio from the stoichiometric to the O-rich, the growth mode changed from three- to two-dimensional growth and the line widths of (0 0 0 2) and (1 0 1 0) omega-rocking curves showed dramatic narrowing from 471 to 42 arcsec and from 163 5 to 46 arcsec, respectively. These values are narrower compared to those of ZnO on sapphire and also those of device-grade MOCVD-grown GaN. Moreover, A-, B-excitons (FEA, FEB), and the n = 2 state of FEA at 3.378, 3.393, and 3.424 eV, respectively, were clearly observed in the low-temperature (4.2 K) photoluminescence spectrum of ZnO grown under O-rich flux conditions. Our results show that growth under high O-rich flux conditions is required to produce high-quality Zn-polar ZnO films. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:375 / 381
页数:7
相关论文
共 17 条
  • [1] High temperature excitonic stimulated emission from ZnO epitaxial layers
    Bagnall, DM
    Chen, YF
    Zhu, Z
    Yao, T
    Shen, MY
    Goto, T
    [J]. APPLIED PHYSICS LETTERS, 1998, 73 (08) : 1038 - 1040
  • [2] Optically pumped lasing of ZnO at room temperature
    Bagnall, DM
    Chen, YF
    Zhu, Z
    Yao, T
    Koyama, S
    Shen, MY
    Goto, T
    [J]. APPLIED PHYSICS LETTERS, 1997, 70 (17) : 2230 - 2232
  • [3] Plasma-assisted molecular beam epitaxy of ZnO thin films on sapphire substrates with an MgO buffer
    Chen, YF
    Ko, HJ
    Hong, SK
    Inaba, K
    Segawa, Y
    Yao, T
    [J]. JOURNAL OF CRYSTAL GROWTH, 2001, 227 : 917 - 922
  • [4] EASON DB, 2002, 2002 INT C SOL STAT, P360
  • [5] ZnO and related materials: Plasma-assisted molecular beam epitaxial growth, characterization, and application
    Hong, SK
    Chen, Y
    Ko, HJ
    Wenisch, H
    Hanada, T
    Yao, T
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 2001, 30 (06) : 647 - 658
  • [6] Homoepitaxial growth of high-quality Zn-polar ZnO films by plasma-assisted molecular beam epitaxy
    Kato, H
    Sano, M
    Miyamoto, K
    Yao, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2003, 42 (8B): : L1002 - L1005
  • [7] Kato H, 2003, JPN J APPL PHYS 1, V42, P2241, DOI [10.1143/JJAP.42.2241, 10.1143/JJAP.42.224]
  • [8] Effects of slight misorientation of GaN templates on molecular-beam-epitaxy growth of ZnO
    Kato, H
    Sano, M
    Miyamoto, K
    Yao, T
    [J]. JOURNAL OF APPLIED PHYSICS, 2002, 92 (04) : 1960 - 1963
  • [9] Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxy
    Look, DC
    Reynolds, DC
    Litton, CW
    Jones, RL
    Eason, DB
    Cantwell, G
    [J]. APPLIED PHYSICS LETTERS, 2002, 81 (10) : 1830 - 1832
  • [10] Metzger T, 1998, PHILOS MAG A, V77, P1013, DOI 10.1080/01418619808221225