Critical points of the bandstructure of AlN/GaN superlattices investigated by spectroscopic ellipsometry and modulation spectroscopy

被引：2

作者：

Buchheim, C. ^{[1
,2
]}

Goldhahn, R. ^{[2
]}

Winzer, A. T. ^{[2
]}

Cobet, C. ^{[3
]}

Rake, M. ^{[3
]}

Esser, N. ^{[3
]}

Rossow, U. ^{[4
]}

Fuhrmann, D. ^{[4
]}

Hangleiter, A. ^{[4
]}

Ambacher, O. ^{[1
]}

机构：

[1] Tech Univ Ilmenau, Ctr Micro & Nanotechnol, PF 100565, D-98684 Ilmenau, Germany

[2] Tech Univ Ilmenau, Inst Phys, D-98684 Ilmenau, Germany

[3] Inst Anal Sci, Dept Berlin Adlershof, D-12489 Berlin, Germany

[4] Tech Univ Carolo Wilhelmina Braunschweig, Inst Appl Phys, D-38106 Braunschweig, Germany

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6 | 2006年 / 3卷 / 06期

关键词：

D O I：

10.1002/pssc.200565300

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The ground state transition energies of AlN/GaN superlattices are determined by photoreflectance spectroscopy and spectroscopic ellipsometry. A shift of the transition energies in dependence on the barrier and well widths is found. The results are compared to quantum mechanical calculations at the Brillouin zone centre. Extending the measurements up to 9.8 eV, quantum confinement effects are observed for higher energetic critical points of the bandstructure, too. The complex dielectric functions of the superlattices are reported from 1.2 to 9.8 eV. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2009 / 2013

页数：5

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