Polarization induced charge at heterojunctions of the III-V nitrides and their alloys

被引：0

作者：

Foutz, BE ^{[1
]}

Ambacher, O ^{[1
]}

Murphy, MJ ^{[1
]}

Tilak, V ^{[1
]}

Eastman, LF ^{[1
]}

机构：

[1] Cornell Univ, Sch Elect Engn, Ithaca, NY 14853 USA

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1999年 / 216卷 / 01期

关键词：

D O I：

10.1002/(SICI)1521-3951(199911)216:1<415::AID-PSSB415>3.0.CO;2-W

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We examine the bound charge present when the III-nitride alloys, AlGaN, InGaN, and AlInN, are pseudomorphically grown on templates of relaxed GaN, InN, and AIN epitaxial layers. The advantages of yet unrealized heterojunctions, such as AIInN/InN, are compared with the more common AlGaN/GaN heterojunction. Special attention is paid to AlInN/GaN where a lattice matched and a zero total bound charge heterojunction are possible.

引用

页码：415 / 418

页数：4

共 5 条

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