Energy level broadening control in quantum dots by interfacial doping

被引：1
作者：
Shi, JM [1 ]
Freire, VN [1 ]
Farias, GA [1 ]
机构：
[1] Univ Fed Ceara, Dept Fis, BR-60455760 Fortaleza, Ceara, Brazil
来源：
SOLID STATE COMMUNICATIONS | 1999年 / 113卷 / 02期
关键词：
semiconductors; nanostructures; optical properties; electronic states;
D O I：
10.1016/S0038-1098(99)00449-4
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A method is proposed to diminish the energy level broadening in quantum dots due to size fluctuations. It is shown that doping the Faded interface region of quantum dots can considerably reduce the broadening of their energy levels. In the case of spherical GaAs/Al0.3Ga0.7As dots of radii similar to 50 Angstrom and interface width 20 Angstrom, the presence of a Si donor in the middle of the interfaces can decrease their energy level broadening by as much as 20 meV. (C) 1999 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：115 / 119
页数：5
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