Growth of SiC polytypes by the physical vapour transport technique

A brief survey of the development of the sublimation growth of SiC is given. The growth equipment and especially the hot zone of the furnace for the physical vapour transport (PVT) technique are described in detail. In order to grow micropipe-free SiC crystals, near-thermal-equilibrium growth is developed and the individual processing steps are revealed. The essential parameters for the growth of 4H-, 6H-, 15R- and 3C-SiC single crystals are discussed and a survey of the incorporation of donors (N, P) and acceptors (Al, B) during the PVT growth is presented.